JPS5613747A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5613747A
JPS5613747A JP8953279A JP8953279A JPS5613747A JP S5613747 A JPS5613747 A JP S5613747A JP 8953279 A JP8953279 A JP 8953279A JP 8953279 A JP8953279 A JP 8953279A JP S5613747 A JPS5613747 A JP S5613747A
Authority
JP
Japan
Prior art keywords
defects
patterns
dummy
memory
dummy patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8953279A
Other languages
Japanese (ja)
Inventor
Keiichi Kagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8953279A priority Critical patent/JPS5613747A/en
Publication of JPS5613747A publication Critical patent/JPS5613747A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the generation of dislocation and the defects of laminating at an end portion of a memory cell portion by a method wherein not less than one dummy patterns are formed around the cell. CONSTITUTION:A peripheral portion of a memory element consisting of a memory cell portion 14 and a memory surrounding circuit 15 is enclosed by dummy patterns 16 having no electrical relation to a central portion by about 1-5 rows in the X direction and the Y direction. Thus, defects to a photolithography process and defects generated in case of heat treatment can be absorbed to the dummy pattern side by forming the dummy patterns. Consequently, defects which threshold value voltage and mutual conductance change due to the thinning of a mask prescribing channel length and channel width are displayed at the dummy pattern portions, and the cell portion 14 can normally work without being subject to the deformation of patterns at all.
JP8953279A 1979-07-13 1979-07-13 Semiconductor device Pending JPS5613747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8953279A JPS5613747A (en) 1979-07-13 1979-07-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8953279A JPS5613747A (en) 1979-07-13 1979-07-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5613747A true JPS5613747A (en) 1981-02-10

Family

ID=13973414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8953279A Pending JPS5613747A (en) 1979-07-13 1979-07-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5613747A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148118A (en) * 1984-01-13 1985-08-05 Toshiba Corp Semiconductor device
JPS61191052A (en) * 1985-02-20 1986-08-25 Sanyo Electric Co Ltd Manufacture of semiconductor memory device
JPS62128558A (en) * 1985-11-29 1987-06-10 Mitsubishi Electric Corp Semiconductor memory device
JPS63292667A (en) * 1987-05-25 1988-11-29 Nec Corp Mos semiconductor device
WO1992002044A1 (en) * 1990-07-18 1992-02-06 Seiko Epson Corporation Semiconductor device
CN1049762C (en) * 1994-06-27 2000-02-23 现代电子产业株式会社 Method of forming a dummy pattern to prevent the cracking of an insulation layer
JP2021057400A (en) * 2019-09-27 2021-04-08 ラピスセミコンダクタ株式会社 Semiconductor device and manufacturing method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148118A (en) * 1984-01-13 1985-08-05 Toshiba Corp Semiconductor device
JPS61191052A (en) * 1985-02-20 1986-08-25 Sanyo Electric Co Ltd Manufacture of semiconductor memory device
JPS62128558A (en) * 1985-11-29 1987-06-10 Mitsubishi Electric Corp Semiconductor memory device
JPS63292667A (en) * 1987-05-25 1988-11-29 Nec Corp Mos semiconductor device
WO1992002044A1 (en) * 1990-07-18 1992-02-06 Seiko Epson Corporation Semiconductor device
US5304835A (en) * 1990-07-18 1994-04-19 Seiko Epson Corporation Semiconductor device
CN1049762C (en) * 1994-06-27 2000-02-23 现代电子产业株式会社 Method of forming a dummy pattern to prevent the cracking of an insulation layer
JP2021057400A (en) * 2019-09-27 2021-04-08 ラピスセミコンダクタ株式会社 Semiconductor device and manufacturing method thereof

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