JPS5613747A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5613747A JPS5613747A JP8953279A JP8953279A JPS5613747A JP S5613747 A JPS5613747 A JP S5613747A JP 8953279 A JP8953279 A JP 8953279A JP 8953279 A JP8953279 A JP 8953279A JP S5613747 A JPS5613747 A JP S5613747A
- Authority
- JP
- Japan
- Prior art keywords
- defects
- patterns
- dummy
- memory
- dummy patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the generation of dislocation and the defects of laminating at an end portion of a memory cell portion by a method wherein not less than one dummy patterns are formed around the cell. CONSTITUTION:A peripheral portion of a memory element consisting of a memory cell portion 14 and a memory surrounding circuit 15 is enclosed by dummy patterns 16 having no electrical relation to a central portion by about 1-5 rows in the X direction and the Y direction. Thus, defects to a photolithography process and defects generated in case of heat treatment can be absorbed to the dummy pattern side by forming the dummy patterns. Consequently, defects which threshold value voltage and mutual conductance change due to the thinning of a mask prescribing channel length and channel width are displayed at the dummy pattern portions, and the cell portion 14 can normally work without being subject to the deformation of patterns at all.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8953279A JPS5613747A (en) | 1979-07-13 | 1979-07-13 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8953279A JPS5613747A (en) | 1979-07-13 | 1979-07-13 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5613747A true JPS5613747A (en) | 1981-02-10 |
Family
ID=13973414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8953279A Pending JPS5613747A (en) | 1979-07-13 | 1979-07-13 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5613747A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60148118A (en) * | 1984-01-13 | 1985-08-05 | Toshiba Corp | Semiconductor device |
JPS61191052A (en) * | 1985-02-20 | 1986-08-25 | Sanyo Electric Co Ltd | Manufacture of semiconductor memory device |
JPS62128558A (en) * | 1985-11-29 | 1987-06-10 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS63292667A (en) * | 1987-05-25 | 1988-11-29 | Nec Corp | Mos semiconductor device |
WO1992002044A1 (en) * | 1990-07-18 | 1992-02-06 | Seiko Epson Corporation | Semiconductor device |
CN1049762C (en) * | 1994-06-27 | 2000-02-23 | 现代电子产业株式会社 | Method of forming a dummy pattern to prevent the cracking of an insulation layer |
JP2021057400A (en) * | 2019-09-27 | 2021-04-08 | ラピスセミコンダクタ株式会社 | Semiconductor device and manufacturing method thereof |
-
1979
- 1979-07-13 JP JP8953279A patent/JPS5613747A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60148118A (en) * | 1984-01-13 | 1985-08-05 | Toshiba Corp | Semiconductor device |
JPS61191052A (en) * | 1985-02-20 | 1986-08-25 | Sanyo Electric Co Ltd | Manufacture of semiconductor memory device |
JPS62128558A (en) * | 1985-11-29 | 1987-06-10 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS63292667A (en) * | 1987-05-25 | 1988-11-29 | Nec Corp | Mos semiconductor device |
WO1992002044A1 (en) * | 1990-07-18 | 1992-02-06 | Seiko Epson Corporation | Semiconductor device |
US5304835A (en) * | 1990-07-18 | 1994-04-19 | Seiko Epson Corporation | Semiconductor device |
CN1049762C (en) * | 1994-06-27 | 2000-02-23 | 现代电子产业株式会社 | Method of forming a dummy pattern to prevent the cracking of an insulation layer |
JP2021057400A (en) * | 2019-09-27 | 2021-04-08 | ラピスセミコンダクタ株式会社 | Semiconductor device and manufacturing method thereof |
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