JPS52103963A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
JPS52103963A
JPS52103963A JP1939076A JP1939076A JPS52103963A JP S52103963 A JPS52103963 A JP S52103963A JP 1939076 A JP1939076 A JP 1939076A JP 1939076 A JP1939076 A JP 1939076A JP S52103963 A JPS52103963 A JP S52103963A
Authority
JP
Japan
Prior art keywords
insulation film
slant
manufacturing
semiconductor device
treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1939076A
Other languages
Japanese (ja)
Other versions
JPS6030099B2 (en
Inventor
Hiroo Naganuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51019390A priority Critical patent/JPS6030099B2/en
Publication of JPS52103963A publication Critical patent/JPS52103963A/en
Publication of JPS6030099B2 publication Critical patent/JPS6030099B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To prevent wire breakage by providing the multiple numbers of the small holes on the resist film, which is fixed to the insulation film on the base board, in the interval of two times the allowable slant width and treating the insulation film with slant etching process so as to provide appropriate slant degree on the insulation film side.
COPYRIGHT: (C)1977,JPO&Japio
JP51019390A 1976-02-26 1976-02-26 Etching gradient determination method Expired JPS6030099B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51019390A JPS6030099B2 (en) 1976-02-26 1976-02-26 Etching gradient determination method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51019390A JPS6030099B2 (en) 1976-02-26 1976-02-26 Etching gradient determination method

Publications (2)

Publication Number Publication Date
JPS52103963A true JPS52103963A (en) 1977-08-31
JPS6030099B2 JPS6030099B2 (en) 1985-07-15

Family

ID=11997945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51019390A Expired JPS6030099B2 (en) 1976-02-26 1976-02-26 Etching gradient determination method

Country Status (1)

Country Link
JP (1) JPS6030099B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577933A (en) * 1980-06-19 1982-01-16 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577933A (en) * 1980-06-19 1982-01-16 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6030099B2 (en) 1985-07-15

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