JPS5717134A - Device for decompression and reaction - Google Patents

Device for decompression and reaction

Info

Publication number
JPS5717134A
JPS5717134A JP9157380A JP9157380A JPS5717134A JP S5717134 A JPS5717134 A JP S5717134A JP 9157380 A JP9157380 A JP 9157380A JP 9157380 A JP9157380 A JP 9157380A JP S5717134 A JPS5717134 A JP S5717134A
Authority
JP
Japan
Prior art keywords
gas
exhaust
reaction
decompression
pipes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9157380A
Other languages
Japanese (ja)
Inventor
Hitoshi Ogi
Shinya Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP9157380A priority Critical patent/JPS5717134A/en
Publication of JPS5717134A publication Critical patent/JPS5717134A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To uniformalize the flow of gas and the growth of film by a method wherein a plurality of exhaust pipes and a main gas exhaust pipe, at one end of which the ends of said exhaust pipes are commonly connected and the other end of which is connected to a vacuum pump, are provided inside a decompression and reaction case. CONSTITUTION:The gas exhausting pipes 8a-8n are provided in the decompression and reaction case 1 having paralleled flat plate electrodes 3 and 4, these exhaust pipes are connected to the main exhaust pipe 8, which is connected to the exhaust pump 9, the inside of the case is decompressed and a thin film is formed by inducing gas from a reaction gas introducing pipe 5. Through these procedures, the flow of gas is dispersed and it is equalized in entirety, thereby enabling to perform a film formation and an etching uniformly.
JP9157380A 1980-07-04 1980-07-04 Device for decompression and reaction Pending JPS5717134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9157380A JPS5717134A (en) 1980-07-04 1980-07-04 Device for decompression and reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9157380A JPS5717134A (en) 1980-07-04 1980-07-04 Device for decompression and reaction

Publications (1)

Publication Number Publication Date
JPS5717134A true JPS5717134A (en) 1982-01-28

Family

ID=14030264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9157380A Pending JPS5717134A (en) 1980-07-04 1980-07-04 Device for decompression and reaction

Country Status (1)

Country Link
JP (1) JPS5717134A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6459916A (en) * 1987-08-31 1989-03-07 Kyushu Nippon Electric Batch type reactive ion etching device
JPS6473619A (en) * 1987-09-14 1989-03-17 Fujitsu Ltd Method and apparatus for low-pressure process
US4987855A (en) * 1989-11-09 1991-01-29 Santa Barbara Research Center Reactor for laser-assisted chemical vapor deposition
CN102974588A (en) * 2012-09-27 2013-03-20 北京七星华创电子股份有限公司 Technology chamber air exhaust system and air exhaust method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104476A (en) * 1976-03-01 1977-09-01 Hitachi Ltd Ion spattering apparatus
JPS5364676A (en) * 1976-11-22 1978-06-09 Hitachi Ltd Treating apparatus in gas phase

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104476A (en) * 1976-03-01 1977-09-01 Hitachi Ltd Ion spattering apparatus
JPS5364676A (en) * 1976-11-22 1978-06-09 Hitachi Ltd Treating apparatus in gas phase

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6459916A (en) * 1987-08-31 1989-03-07 Kyushu Nippon Electric Batch type reactive ion etching device
JPS6473619A (en) * 1987-09-14 1989-03-17 Fujitsu Ltd Method and apparatus for low-pressure process
US4987855A (en) * 1989-11-09 1991-01-29 Santa Barbara Research Center Reactor for laser-assisted chemical vapor deposition
CN102974588A (en) * 2012-09-27 2013-03-20 北京七星华创电子股份有限公司 Technology chamber air exhaust system and air exhaust method

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