JPS56115524A - Heat treatment of semiconductor wafer - Google Patents

Heat treatment of semiconductor wafer

Info

Publication number
JPS56115524A
JPS56115524A JP1813580A JP1813580A JPS56115524A JP S56115524 A JPS56115524 A JP S56115524A JP 1813580 A JP1813580 A JP 1813580A JP 1813580 A JP1813580 A JP 1813580A JP S56115524 A JPS56115524 A JP S56115524A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
heat treatment
flowing
heat
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1813580A
Other languages
Japanese (ja)
Inventor
Hirotake Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1813580A priority Critical patent/JPS56115524A/en
Publication of JPS56115524A publication Critical patent/JPS56115524A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

PURPOSE:To prevent the ununiformity of heat treatment preventing oxidation of the semiconductor wafer by a method wherein the semiconductor wafer is arranged in a reaction cylinder preventing air back-flowing from an opening part at the opposite side from a gas introducing tube of heat treatment tube and is heat-treated. CONSTITUTION:The semiconductor wafer 5 (6 is a quartz boat) is put in the reac- tion cylinder 7 having ventilating holes to prevent air back-flowing from the opening part 4 at the opposite side from the gas introducing tube 3 of the heat treatment tube 2 consisting of quartz arranged in a heating furnace 1, and the semiconductor wafer is heat-treated (8 is a draw out bar, 9 is an operating device). Accordingly oxidation of the semiconductor wafer by back-flowing air is prevented, and the ununiformity of sintering treatment by the influence of gas current is prevented.
JP1813580A 1980-02-16 1980-02-16 Heat treatment of semiconductor wafer Pending JPS56115524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1813580A JPS56115524A (en) 1980-02-16 1980-02-16 Heat treatment of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1813580A JPS56115524A (en) 1980-02-16 1980-02-16 Heat treatment of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS56115524A true JPS56115524A (en) 1981-09-10

Family

ID=11963151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1813580A Pending JPS56115524A (en) 1980-02-16 1980-02-16 Heat treatment of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS56115524A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2583779A1 (en) * 1985-06-25 1986-12-26 Montaudon Patrick Device for reducing the oxidation of objects placed in a gas treatment enclosure when they are extracted therefrom
EP0262861A2 (en) * 1986-09-30 1988-04-06 Denton Vacuum Inc Apparatus for coating substrate devices
WO2017115573A1 (en) * 2015-12-28 2017-07-06 三菱電機株式会社 Horizontal diffusion furnace and solar cell production method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2583779A1 (en) * 1985-06-25 1986-12-26 Montaudon Patrick Device for reducing the oxidation of objects placed in a gas treatment enclosure when they are extracted therefrom
EP0262861A2 (en) * 1986-09-30 1988-04-06 Denton Vacuum Inc Apparatus for coating substrate devices
WO2017115573A1 (en) * 2015-12-28 2017-07-06 三菱電機株式会社 Horizontal diffusion furnace and solar cell production method
JPWO2017115573A1 (en) * 2015-12-28 2018-05-24 三菱電機株式会社 Horizontal diffusion furnace and method for manufacturing solar cell

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