JPH0582460A - Lateral type heat-treating equipment and heat treating method - Google Patents
Lateral type heat-treating equipment and heat treating methodInfo
- Publication number
- JPH0582460A JPH0582460A JP23902591A JP23902591A JPH0582460A JP H0582460 A JPH0582460 A JP H0582460A JP 23902591 A JP23902591 A JP 23902591A JP 23902591 A JP23902591 A JP 23902591A JP H0582460 A JPH0582460 A JP H0582460A
- Authority
- JP
- Japan
- Prior art keywords
- cylinder part
- quartz tube
- cap
- heat treatment
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Muffle Furnaces And Rotary Kilns (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の製造におい
て半導体ウエーハに熱処理を施す横型熱処理装置と熱処
理方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a horizontal heat treatment apparatus and a heat treatment method for heat-treating a semiconductor wafer in manufacturing a semiconductor device.
【０００２】近年、半導体装置を構成する導体パターン
が微細化するに伴って表面に酸化膜を生成する工程等に
おいても、所望する性質のガス以外のガスによって生成
される余分な自然酸化膜の発生は極力抑えるように要求
されている。In recent years, an extra natural oxide film generated by a gas other than a gas having a desired property is generated even in a step of forming an oxide film on the surface as a conductor pattern forming a semiconductor device is miniaturized. Is required to be suppressed as much as possible.
【０００３】半導体ウエーハの表面に酸化膜を生成する
工程等では一般に被処理ウエーハを石英管内に収容し、
所望する性質のガスを石英管内に供給しながら外側に設
けられたヒーターで加熱しており余分な自然酸化膜が発
生することはない。In the process of forming an oxide film on the surface of a semiconductor wafer, the wafer to be processed is generally housed in a quartz tube,
Since a gas having a desired property is supplied into the quartz tube while being heated by a heater provided outside, an extra natural oxide film is not generated.
【０００４】しかし、従来の横型熱処理装置は熱処理済
のウエーハを取り出す際等に石英管を封止しているキャ
ップを取り除くと、石英管内に空気が流入して冷却途上
で高温状態にある被処理ウエーハが空気に触れて表面が
酸化される場合がある。However, in the conventional horizontal heat treatment apparatus, when the cap that seals the quartz tube is removed when taking out the heat-treated wafer, air flows into the quartz tube and the object to be treated is in a high temperature state during cooling. The wafer may come into contact with air and the surface may be oxidized.
【０００５】そこで熱処理済のウエーハを取り出す際等
にキャップを取り除いても石英管内に空気が流入するこ
となく、所望する性質のガス以外のガスによる自然酸化
膜の生成を防止できる横型熱処理装置と熱処理方法の実
現が要望されている。Therefore, even if the cap is removed when taking out the heat-treated wafer, air does not flow into the quartz tube, and the formation of a natural oxide film by a gas other than the gas of the desired property can be prevented, and a heat treatment. Implementation of the method is desired.
【０００６】[0006]
【従来の技術】図２は従来の横型熱処理装置の主要部を
示す側断面図である。図２(a) において従来の横型熱処
理装置は耐熱性を有する絶縁物質で形成された炉本体１
と石英管２を有し、炉本体１に設けられた円形のトンネ
ルには内壁面に沿って加熱用のヒーター３が螺旋状に巻
回されている。2. Description of the Related Art FIG. 2 is a side sectional view showing a main part of a conventional horizontal heat treatment apparatus. In FIG. 2 (a), a conventional horizontal heat treatment apparatus has a furnace body 1 made of an insulating material having heat resistance.
And a quartz tube 2, and a heater 3 for heating is spirally wound along an inner wall surface in a circular tunnel provided in the furnace body 1.
【０００７】またヒーター３の中に挿入される石英管２
は一端が開口しておりキャップ４を嵌挿することにより
封止される。また石英管２の他端は閉止されており所望
する性質のガスＦ1 を供給する配管５が石英管２の閉止
端側に開口している。The quartz tube 2 inserted in the heater 3
Is opened at one end and is sealed by inserting the cap 4. Further, the other end of the quartz tube 2 is closed, and a pipe 5 for supplying a gas F 1 having a desired property is open to the closed end side of the quartz tube 2.
【０００８】保持治具６に搭載された被処理ウエーハ７
を石英管２に収容してキャップ４を石英管２の開口端側
に嵌挿し、配管５を介して所望する性質のガスＦ1 を石
英管２内に供給しながら加熱することによって被処理ウ
エーハ７は熱処理される。A wafer 7 to be processed mounted on the holding jig 6.
Is placed in the quartz tube 2, the cap 4 is inserted into the opening end side of the quartz tube 2, and the gas F 1 having a desired property is supplied into the quartz tube 2 through the pipe 5 and heated to heat the wafer to be processed. 7 is heat treated.
【０００９】[0009]
【発明が解決しようとする課題】しかし、従来の横型熱
処理装置は熱処理済のウエーハ７を取り出す際等にキャ
ップ４を取り除くと、図２(b) に矢印で示す如く加熱さ
れて温度が高くなっているガスＦ1 は石英管２の開口端
面から上方に流出し、ガス圧力の低下した石英管２の下
部には矢印で示す如く外部から空気Ａが流入してガスＦ
1 と混合される。その結果、冷却途上で高温状態にある
被処理ウエーハ７が空気Ａに触れて表面が酸化されると
いう問題があった。However, in the conventional horizontal heat treatment apparatus, when the cap 4 is removed when taking out the heat-treated wafer 7, the temperature is increased by heating as shown by the arrow in FIG. 2 (b). The gas F 1 flowing out flows upward from the open end surface of the quartz tube 2, and air A flows from the outside into the lower portion of the quartz tube 2 where the gas pressure has dropped, as indicated by the arrow, and the gas F 1 is discharged.
Mixed with one . As a result, there is a problem that the wafer to be processed 7 which is in a high temperature state during cooling is in contact with the air A and the surface is oxidized.
【００１０】本発明の目的は石英管内に空気が流入する
ことなく自然酸化膜の生成を防止できる横型熱処理装置
と熱処理方法を提供することにある。An object of the present invention is to provide a horizontal heat treatment apparatus and a heat treatment method capable of preventing the formation of a natural oxide film without air flowing into a quartz tube.
【００１１】[0011]
【課題を解決するための手段】図１は本発明になる横型
熱処理装置の主要部を示す側断面図である。なお全図を
通し同じ対象物は同一記号で表している。FIG. 1 is a side sectional view showing a main part of a horizontal heat treatment apparatus according to the present invention. Note that the same object is denoted by the same symbol throughout the drawings.
【００１２】上記課題は内筒部81および内筒部81の外側
に同心円状に設けられてなる外筒部82からなり、内筒部
81および外筒部82の一端が開口し他端が閉止されてなる
石英管８と、内壁面に沿って螺旋状にヒーター３が巻回
され石英管８がヒーター３の中に挿入される炉本体１を
有し、且つ、内筒部81の開口端面を閉鎖するキャップ91
および外筒部82の開口端面を閉鎖するキャップ92と、閉
止側から内筒部81内に所望する性質のガスを供給可能な
配管51と、閉止側から外筒部82内に不活性ガスを供給可
能な配管52とを具えてなる本発明の横型熱処理装置。お
よび上記横型熱処理装置において石英管８の内筒部81に
被処理物体７を収容し、配管51を介して内筒部81内に所
望する性質のガスを供給しながら被処理物体７の熱処理
を行うと共に、内筒部81と外筒部82の開口端面を開放し
たとき外筒部82から流出する不活性ガスの速度が、内筒
部81から流出するガスの速度より速くなるよう外筒部82
内に不活性ガスを供給する本発明になる熱処理方法によ
って達成される。The above-mentioned problem consists of an inner cylinder portion 81 and an outer cylinder portion 82 concentrically provided outside the inner cylinder portion 81.
A quartz tube 8 in which one end of 81 and an outer tube portion 82 are open and the other end is closed, and a furnace in which the heater 3 is spirally wound along the inner wall surface and the quartz tube 8 is inserted into the heater 3. A cap 91 having the main body 1 and closing the opening end face of the inner tubular portion 81.
And a cap 92 that closes the open end surface of the outer tubular portion 82, a pipe 51 that can supply a gas of a desired property from the closing side into the inner tubular portion 81, and an inert gas from the closing side into the outer tubular portion 82. A horizontal heat treatment apparatus according to the present invention, which comprises a supplyable pipe 52. In the horizontal heat treatment apparatus, the object 7 is housed in the inner cylinder 81 of the quartz tube 8, and the object 7 is heat-treated while supplying a gas having a desired property into the inner cylinder 81 through the pipe 51. At the same time, the velocity of the inert gas flowing out of the outer tubular part 82 when the open end faces of the inner tubular part 81 and the outer tubular part 82 are opened is higher than the velocity of the gas flowing out of the inner tubular part 81. 82
This is achieved by the heat treatment method of the present invention in which an inert gas is supplied.
【００１３】[0013]
【作用】図１において内筒部と内筒部の外側に設けられ
た外筒部からなり内筒部と外筒部の一端が開口し他端が
閉止されてなる石英管を有し、且つ、内筒部の開口端面
を閉鎖するキャップおよび外筒部の開口端面を閉鎖する
キャップと、閉止側から内筒部内に所望する性質のガス
を供給可能な配管と、閉止側から外筒部内に不活性ガス
を供給可能な配管とを具えてなる本発明の横型熱処理装
置は、内筒部に被処理物体を収容し所望する性質のガス
を供給しながら被処理物体の熱処理を行うと共に、内筒
部と外筒部の開口端面を開放したとき外筒部から流出す
る不活性ガスの速度が、内筒部から流出するガスの速度
より速くなるよう外筒部内に不活性ガスを供給すること
によって、キャップを取り除いても内筒部の開口端面は
不活性ガスで覆われ、内筒部内への空気の流入が遮断さ
れて高温状態にある被処理ウエーハの酸化が防止され
る。即ち、石英管内に空気が流入することなく自然酸化
膜の生成を防止できる横型熱処理装置と熱処理方法を実
現することができる。In FIG. 1, there is provided a quartz tube having an inner cylinder portion and an outer cylinder portion provided outside the inner cylinder portion and having one end of the inner cylinder portion and the outer cylinder portion opened and the other end closed. A cap that closes the opening end surface of the inner tubular portion and a cap that closes the opening end surface of the outer tubular portion; piping that can supply a gas of a desired property from the closing side into the inner tubular portion; The horizontal heat treatment apparatus of the present invention, which comprises a pipe capable of supplying an inert gas, accommodates the object to be processed in the inner cylinder part and heat-processes the object while supplying a gas of a desired property, and Supplying the inert gas into the outer cylinder so that the velocity of the inert gas flowing out of the outer cylinder becomes faster than the velocity of the gas flowing out of the inner cylinder when the open end faces of the cylinder and the outer cylinder are opened. Even if the cap is removed, the open end surface of the inner cylinder is covered with an inert gas. , Oxidation of the treated wafer in blocked inflow of air into the inner cylinder portion to a high temperature condition can be prevented. That is, it is possible to realize a horizontal heat treatment apparatus and a heat treatment method capable of preventing the formation of a natural oxide film without air flowing into the quartz tube.
【００１４】[0014]
【実施例】以下図１により本発明の実施例について詳細
に説明する。図１(a) において本発明になる横型熱処理
装置は耐熱性を有する絶縁物質で形成された炉本体１と
石英管８を有し、炉本体１に設けられた円形のトンネル
には内壁面に沿って加熱用のヒーター３が螺旋状に巻回
されている。Embodiments of the present invention will be described in detail below with reference to FIG. In FIG. 1 (a), the horizontal heat treatment apparatus according to the present invention has a furnace body 1 and a quartz tube 8 made of an insulating material having heat resistance, and a circular tunnel provided in the furnace body 1 has an inner wall surface A heater 3 for heating is spirally wound along it.
【００１５】またヒーター３の中に挿入される石英管８
は内筒部81と内筒部81の外側に設けられた外筒部82から
なり、図示省略されたスペーサを介して同心円状に配置
された内筒部81および外筒部82は共に一端が開口し他端
が閉止されている。A quartz tube 8 inserted in the heater 3
Is composed of an inner tubular portion 81 and an outer tubular portion 82 provided outside the inner tubular portion 81. One end of each of the inner tubular portion 81 and the outer tubular portion 82 arranged concentrically through a spacer (not shown) is provided. It is open and the other end is closed.
【００１６】更に内筒部81の開口端面側に嵌挿するキャ
ップ91と外筒部82の開口端面側に嵌挿するキャップ92を
具えており、内筒部81と外筒部82の開口端面の開閉が一
つの動作で行なえるようにキャップ91とキャップ92は一
体化されている。Further, there are provided a cap 91 fitted on the opening end face side of the inner tubular portion 81 and a cap 92 fitted on the open end face side of the outer tubular portion 82, and the opening end faces of the inner tubular portion 81 and the outer tubular portion 82 are provided. The cap 91 and the cap 92 are integrated so that they can be opened and closed by a single operation.
【００１７】上記石英管８において内筒部81の開口端面
よりも外筒部82の開口端面の方が前方に突出しており、
一体化されたキャップ91とキャップ92は外筒部82の開口
端面を閉鎖する前に内筒部81の開口端面を閉鎖するよう
に構成されている。In the above-mentioned quartz tube 8, the opening end face of the outer cylinder portion 82 projects forward from the opening end face of the inner cylinder portion 81,
The integrated cap 91 and cap 92 are configured to close the open end surface of the inner tubular portion 81 before closing the open end surface of the outer tubular portion 82.
【００１８】内筒部81の閉止側には配管51が開口してお
り配管51を介して内筒部81内に所望する性質のガスＦ1
が供給される。また外筒部82の閉止側には配管52が開口
しており配管52を介して外筒部82内に不活性ガスＦ2 が
供給される。A pipe 51 is opened on the closed side of the inner tubular portion 81, and a gas F 1 having a desired property is fed into the inner tubular portion 81 through the pipe 51.
Is supplied. A pipe 52 is opened on the closed side of the outer cylinder portion 82, and the inert gas F 2 is supplied into the outer cylinder portion 82 via the pipe 52.
【００１９】保持治具６に搭載された被処理ウエーハ７
を内筒部81に収容してキャップ91を内筒部81の開口端側
に嵌挿し、配管51を介して所望する性質のガスＦ1 を内
筒部81内に供給しながら加熱することによって被処理ウ
エーハ７は熱処理される。The wafer 7 to be processed mounted on the holding jig 6.
Is housed in the inner cylinder portion 81, the cap 91 is fitted into the inner cylinder portion 81 at the opening end side, and the gas F 1 having a desired property is heated while being supplied into the inner cylinder portion 81 through the pipe 51. The wafer 7 to be processed is heat-treated.
【００２０】このとき外筒部82内には内筒部81と外筒部
82の開口端面を開放したとき外筒部82から流出する不活
性ガスＦ2 の速度が、内筒部81から流出するガスＦ1 の
速度より速くなるよう配管52を介して不活性ガスＦ2 が
供給されている。At this time, the inner tubular portion 81 and the outer tubular portion are provided inside the outer tubular portion 82.
82 velocity of the inert gas F 2 flowing out of the outer cylindrical portion 82 when opening the opening end surface of the inner cylindrical portion 81 the inert gas via a pipe 52 so as to be faster than the speed of the gas F 1 flowing from F 2 Is being supplied.
【００２１】図１(b) に示す如くキャップ91とキャップ
92を取り除くとガスＦ1 は内筒部81の開口端面から上方
に流出するが、外筒部82の方が前方に突出し不活性ガス
Ｆ2 の速度の方が早いため内筒部81の開口端面は不活性
ガスＦ2 によって覆われる。As shown in FIG. 1B, the cap 91 and the cap
When 92 is removed, the gas F 1 flows upward from the opening end face of the inner tubular portion 81, but the outer tubular portion 82 projects forward and the velocity of the inert gas F 2 is faster, so the opening of the inner tubular portion 81 is increased. The end face is covered with an inert gas F 2 .
【００２２】その結果、内筒部81内への空気Ａの流入が
遮断されて高温状態にある被処理ウエーハ７の酸化が防
止される。即ち、石英管内に空気が流入することなく自
然酸化膜の生成を防止できる横型熱処理装置と熱処理方
法を実現することができる。As a result, the inflow of the air A into the inner tubular portion 81 is blocked, and the wafer 7 to be processed in a high temperature state is prevented from being oxidized. That is, it is possible to realize a horizontal heat treatment apparatus and a heat treatment method capable of preventing the formation of a natural oxide film without air flowing into the quartz tube.
【００２３】なお、外筒部82の開口端面を閉鎖する前に
内筒部81の開口端面を閉鎖するようキャップ91と92が構
成されており、内筒部81の開口端面を閉鎖する際に外筒
部82の開口端面から流出する不活性ガスＦ2 が内筒部81
内に流入することはない。The caps 91 and 92 are configured to close the open end surface of the inner tubular portion 81 before closing the open end surface of the outer tubular portion 82. The inert gas F 2 flowing out from the open end surface of the outer tubular portion 82 is supplied to the inner tubular portion 81.
It does not flow into the interior.
【００２４】このように内筒部と内筒部の外側に設けら
れた外筒部からなり内筒部と外筒部の一端が開口し他端
が閉止されてなる石英管を有し、且つ、内筒部の開口端
面を閉鎖するキャップおよび外筒部の開口端面を閉鎖す
るキャップと、閉止側から内筒部内に所望する性質のガ
スを供給可能な配管と、閉止側から外筒部内に不活性ガ
スを供給可能な配管とを具えてなる本発明の横型熱処理
装置は、内筒部に被処理物体を収容し所望する性質のガ
スを供給しながら被処理物体の熱処理を行うと共に、内
筒部と外筒部の開口端面を開放したとき外筒部から流出
する不活性ガスの速度が、内筒部から流出するガスの速
度より速くなるよう外筒部内に不活性ガスを供給するこ
とによって、キャップを取り除いても内筒部の開口端面
は不活性ガスで覆われ、内筒部内への空気の流入が遮断
されて高温状態にある被処理ウエーハの酸化が防止され
る。即ち、石英管内に空気が流入することなく自然酸化
膜の生成を防止できる横型熱処理装置と熱処理方法を実
現することができる。As described above, the quartz tube has the inner tubular portion and the outer tubular portion provided on the outer side of the inner tubular portion, and the quartz tube has one end of the inner tubular portion and the outer tubular portion opened and the other end closed. A cap that closes the opening end surface of the inner tubular portion and a cap that closes the opening end surface of the outer tubular portion; piping that can supply a gas of a desired property from the closing side into the inner tubular portion; The horizontal heat treatment apparatus of the present invention, which comprises a pipe capable of supplying an inert gas, accommodates the object to be processed in the inner cylinder part and heat-processes the object while supplying a gas of a desired property, and Supplying the inert gas into the outer cylinder so that the velocity of the inert gas flowing out of the outer cylinder becomes faster than the velocity of the gas flowing out of the inner cylinder when the open end faces of the cylinder and the outer cylinder are opened. Even if the cap is removed, the opening end face of the inner cylinder is covered with an inert gas. Is, oxidation of the treated wafer in blocked inflow of air into the inner cylinder portion to a high temperature condition can be prevented. That is, it is possible to realize a horizontal heat treatment apparatus and a heat treatment method capable of preventing the formation of a natural oxide film without air flowing into the quartz tube.
【００２５】[0025]
【発明の効果】上述の如く本発明によれば石英管内に空
気が流入することなく自然酸化膜の生成を防止できる横
型熱処理装置と熱処理方法を提供することができる。As described above, according to the present invention, it is possible to provide a horizontal heat treatment apparatus and a heat treatment method capable of preventing the formation of a natural oxide film without air flowing into the quartz tube.
【図１】 本発明になる横型熱処理装置の主要部を示す
側断面図である。FIG. 1 is a side sectional view showing a main part of a horizontal heat treatment apparatus according to the present invention.
【図２】 従来の横型熱処理装置の主要部を示す側断面
図である。FIG. 2 is a side sectional view showing a main part of a conventional horizontal heat treatment apparatus.
１ 炉本体 ３ ヒーター ６ 保持治具 ７ 被処理物体（ウエーハ） ８ 石英管 51、52 配管 81 内筒部 82 外筒部 91、92 キャップ 1 Furnace body 3 Heater 6 Holding jig 7 Object to be processed (wafer) 8 Quartz tube 51, 52 Piping 81 Inner tube part 82 Outer tube part 91, 92 Cap
Claims (3)
同心円状に設けられてなる外筒部(82)からなり、該内筒
部(81)および該外筒部(82)の一端が開口し他端が閉止さ
れてなる石英管(8) と、内壁面に沿って螺旋状にヒータ
ー(3) が巻回され該石英管(8)が該ヒーター(3) の中に
挿入される炉本体(1) を有し、 且つ、該内筒部(81)の開口端面を閉鎖するキャップ(91)
および該外筒部(82)の開口端面を閉鎖するキャップ(92)
と、閉止側から該内筒部(81)内に所望する性質のガスを
供給可能な配管(51)と、閉止側から該外筒部(82)内に不
活性ガスを供給可能な配管(52)とを具えてなることを特
徴とする横型熱処理装置。1. An inner cylinder part (81) and an outer cylinder part (82) concentrically provided outside the inner cylinder part (81), the inner cylinder part (81) and the outer cylinder part. A quartz tube (8) having one end of (82) opened and the other end closed, and a heater (3) spirally wound along the inner wall surface of the quartz tube (8) A cap (91) having a furnace body (1) to be inserted into the inside and closing the opening end face of the inner cylinder part (81).
And a cap (92) for closing the open end face of the outer cylinder part (82).
A pipe (51) capable of supplying a gas of a desired property from the closing side into the inner tubular part (81), and a pipe capable of supplying an inert gas from the closing side into the outer tubular part (82) ( 52) A horizontal heat treatment apparatus comprising:
部(81)の開口端面より外筒部(82)の開口端面を突出させ
ると共に、該内筒部(81)の開口端面を閉鎖するキャップ
(91)と該外筒部(82)の開口端面を閉鎖するキャップ(92)
を一体化し、 且つ、該外筒部(82)の開口端面が該キャップ(92)によっ
て閉鎖される前に該内筒部(81)の開口側が、該キャップ
(91)によって閉鎖されるよう構成してなることを特徴と
する横型熱処理装置。2. The quartz tube (8) according to claim 1, wherein the opening end face of the outer cylinder part (82) is projected from the opening end face of the inner cylinder part (81), and the opening end face of the inner cylinder part (81). To close the cap
(91) and a cap (92) for closing the opening end face of the outer cylinder part (82)
And the opening side of the inner cylinder part (81) is closed before the opening end surface of the outer cylinder part (82) is closed by the cap (92).
A horizontal heat treatment apparatus characterized in that it is configured to be closed by (91).
おいて石英管(8) の内筒部(81)に被処理物体(7) を収容
し、配管(51)を介して該内筒部(81)内に所望する性質の
ガスを供給しながら該被処理物体(7) の熱処理を行うと
共に、 該内筒部(81)と外筒部(82)の開口端面を開放したとき該
外筒部(82)から流出する不活性ガスの速度が、該内筒部
(81)から流出するガスの速度より速くなるよう該外筒部
(82)内に不活性ガスを供給することを特徴とする熱処理
方法。3. The horizontal heat treatment apparatus according to claim 1, wherein the object to be treated (7) is housed in the inner tube part (81) of the quartz tube (8), and the inner tube part is connected via the pipe (51). When the object (7) to be treated is heat-treated while supplying a gas of a desired property into the (81) and the opening end faces of the inner tubular part (81) and the outer tubular part (82) are opened, The velocity of the inert gas flowing out of the tubular portion (82) is determined by the inner tubular portion.
(81) so that the speed of the gas flowing out from the outer cylinder
A heat treatment method characterized in that an inert gas is supplied into the (82).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23902591A JPH0582460A (en) | 1991-09-19 | 1991-09-19 | Lateral type heat-treating equipment and heat treating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23902591A JPH0582460A (en) | 1991-09-19 | 1991-09-19 | Lateral type heat-treating equipment and heat treating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0582460A true JPH0582460A (en) | 1993-04-02 |
Family
ID=17038767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23902591A Withdrawn JPH0582460A (en) | 1991-09-19 | 1991-09-19 | Lateral type heat-treating equipment and heat treating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0582460A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002007206A1 (en) * | 2000-07-13 | 2002-01-24 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing silicon wafer |
| DE102007063363A1 (en) * | 2007-05-21 | 2008-11-27 | Centrotherm Photovoltaics Ag | Device for doping and coating semiconductor material at low pressure |
-
1991
- 1991-09-19 JP JP23902591A patent/JPH0582460A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002007206A1 (en) * | 2000-07-13 | 2002-01-24 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing silicon wafer |
| US6878645B2 (en) | 2000-07-13 | 2005-04-12 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing silicon wafer |
| DE102007063363A1 (en) * | 2007-05-21 | 2008-11-27 | Centrotherm Photovoltaics Ag | Device for doping and coating semiconductor material at low pressure |
| DE102007063363B4 (en) * | 2007-05-21 | 2016-05-12 | Centrotherm Photovoltaics Ag | Device for doping and coating semiconductor material at low pressure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981203 |