JPS57106167A - Manufacture of semiconductor integrated circuit device - Google Patents
Manufacture of semiconductor integrated circuit deviceInfo
- Publication number
- JPS57106167A JPS57106167A JP18340780A JP18340780A JPS57106167A JP S57106167 A JPS57106167 A JP S57106167A JP 18340780 A JP18340780 A JP 18340780A JP 18340780 A JP18340780 A JP 18340780A JP S57106167 A JPS57106167 A JP S57106167A
- Authority
- JP
- Japan
- Prior art keywords
- phosphorus
- onto
- oxide film
- single crystal
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 5
- 238000000034 method Methods 0.000 abstract 5
- 229910052698 phosphorus Inorganic materials 0.000 abstract 5
- 239000011574 phosphorus Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 125000004437 phosphorous atom Chemical group 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To conduct phosphorus treatment having no scatter, and to eliminate the need for other stabilizing processes by implanting the ions of phosphorus atoms onto the surface of a silicon oxide film formed onto a silicon single crystal. CONSTITUTION:The gate oxide film 12 is shaped onto the N type silicon single crystal substrate 11 through thermal oxidation. Phosphorus is implanted through an ion implantation method during the time when a gate electrode is formed, and a phosphorus glass layer 13 is molded. It is preferable that the energy of injection is 30keV or lower because the phosphorus layer is shaped to a surface layer section as much as possible. Movable ions do not intrude into the gate section, and the variation of characteristics is removed. Since the phosphorus glass is formed through the ion implantation method, special processes as post- treatment are unnecessitated, and foreign matters (particle, etc.) do not adhere as seen in a gaseous phase growth method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18340780A JPS57106167A (en) | 1980-12-24 | 1980-12-24 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18340780A JPS57106167A (en) | 1980-12-24 | 1980-12-24 | Manufacture of semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57106167A true JPS57106167A (en) | 1982-07-01 |
Family
ID=16135232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18340780A Pending JPS57106167A (en) | 1980-12-24 | 1980-12-24 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57106167A (en) |
-
1980
- 1980-12-24 JP JP18340780A patent/JPS57106167A/en active Pending
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