JPS57103370A - Amorphous semiconductor solar cell - Google Patents

Amorphous semiconductor solar cell

Info

Publication number
JPS57103370A
JPS57103370A JP55179029A JP17902980A JPS57103370A JP S57103370 A JPS57103370 A JP S57103370A JP 55179029 A JP55179029 A JP 55179029A JP 17902980 A JP17902980 A JP 17902980A JP S57103370 A JPS57103370 A JP S57103370A
Authority
JP
Japan
Prior art keywords
metal
substrate
alloy
solar cell
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55179029A
Other languages
English (en)
Japanese (ja)
Other versions
JPH026235B2 (enrdf_load_stackoverflow
Inventor
Mitsuaki Yano
Wataru Yamamoto
Kenji Nakatani
Mitsuo Asano
Hiroshi Okaniwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP55179029A priority Critical patent/JPS57103370A/ja
Publication of JPS57103370A publication Critical patent/JPS57103370A/ja
Publication of JPH026235B2 publication Critical patent/JPH026235B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP55179029A 1980-12-19 1980-12-19 Amorphous semiconductor solar cell Granted JPS57103370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55179029A JPS57103370A (en) 1980-12-19 1980-12-19 Amorphous semiconductor solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55179029A JPS57103370A (en) 1980-12-19 1980-12-19 Amorphous semiconductor solar cell

Publications (2)

Publication Number Publication Date
JPS57103370A true JPS57103370A (en) 1982-06-26
JPH026235B2 JPH026235B2 (enrdf_load_stackoverflow) 1990-02-08

Family

ID=16058859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55179029A Granted JPS57103370A (en) 1980-12-19 1980-12-19 Amorphous semiconductor solar cell

Country Status (1)

Country Link
JP (1) JPS57103370A (enrdf_load_stackoverflow)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898986A (ja) * 1981-12-09 1983-06-13 Seiko Epson Corp 薄膜太陽電池
JPS59108368A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 可撓性薄膜起電力装置
JPS59195879A (ja) * 1983-04-21 1984-11-07 Fuji Electric Co Ltd アモルフアスシリコン太陽電池
JPS6015980A (ja) * 1983-07-08 1985-01-26 Agency Of Ind Science & Technol 太陽電池
JPS613471A (ja) * 1984-06-15 1986-01-09 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS6126268A (ja) * 1984-07-16 1986-02-05 Kanegafuchi Chem Ind Co Ltd 耐熱性アモルフアスシリコン系太陽電池およびその製法
JPS6191974A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性マルチジヤンクシヨン型半導体素子
EP0103168A3 (en) * 1982-09-10 1986-07-02 Hitachi, Ltd. Amorphous silicon solar battery
JPS61174779A (ja) * 1985-01-30 1986-08-06 Kanegafuchi Chem Ind Co Ltd 集光型発電装置
JPS62133770A (ja) * 1985-12-06 1987-06-16 Anritsu Corp オ−ミツク接合装置
JPS63100858U (enrdf_load_stackoverflow) * 1986-12-19 1988-06-30
JPS63138843U (enrdf_load_stackoverflow) * 1987-03-04 1988-09-13
JPS63503103A (ja) * 1985-09-30 1988-11-10 鐘淵化学工業株式会社 マルチジャンクション型半導体デバイス
JPS63285972A (ja) * 1987-05-19 1988-11-22 Fujitsu Ltd バイポ−ラトランジスタおよびその製造方法
JPH0462979A (ja) * 1990-07-02 1992-02-27 Matsushita Electric Ind Co Ltd 水素化アモルファスシリコンを用いた電気素子
JPH04355967A (ja) * 1991-07-26 1992-12-09 Matsushita Electric Ind Co Ltd 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4948778B2 (ja) 2005-03-30 2012-06-06 Ｔｄｋ株式会社 太陽電池およびその色調整方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898986A (ja) * 1981-12-09 1983-06-13 Seiko Epson Corp 薄膜太陽電池
EP0103168A3 (en) * 1982-09-10 1986-07-02 Hitachi, Ltd. Amorphous silicon solar battery
JPS59108368A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 可撓性薄膜起電力装置
JPS59195879A (ja) * 1983-04-21 1984-11-07 Fuji Electric Co Ltd アモルフアスシリコン太陽電池
JPS6015980A (ja) * 1983-07-08 1985-01-26 Agency Of Ind Science & Technol 太陽電池
JPS613471A (ja) * 1984-06-15 1986-01-09 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS6126268A (ja) * 1984-07-16 1986-02-05 Kanegafuchi Chem Ind Co Ltd 耐熱性アモルフアスシリコン系太陽電池およびその製法
JPS6191974A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性マルチジヤンクシヨン型半導体素子
JPS61174779A (ja) * 1985-01-30 1986-08-06 Kanegafuchi Chem Ind Co Ltd 集光型発電装置
JPS63503103A (ja) * 1985-09-30 1988-11-10 鐘淵化学工業株式会社 マルチジャンクション型半導体デバイス
JPS62133770A (ja) * 1985-12-06 1987-06-16 Anritsu Corp オ−ミツク接合装置
JPS63100858U (enrdf_load_stackoverflow) * 1986-12-19 1988-06-30
JPS63138843U (enrdf_load_stackoverflow) * 1987-03-04 1988-09-13
JPS63285972A (ja) * 1987-05-19 1988-11-22 Fujitsu Ltd バイポ−ラトランジスタおよびその製造方法
JPH0462979A (ja) * 1990-07-02 1992-02-27 Matsushita Electric Ind Co Ltd 水素化アモルファスシリコンを用いた電気素子
JPH04355967A (ja) * 1991-07-26 1992-12-09 Matsushita Electric Ind Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPH026235B2 (enrdf_load_stackoverflow) 1990-02-08

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