JPS57103333A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57103333A
JPS57103333A JP17932180A JP17932180A JPS57103333A JP S57103333 A JPS57103333 A JP S57103333A JP 17932180 A JP17932180 A JP 17932180A JP 17932180 A JP17932180 A JP 17932180A JP S57103333 A JPS57103333 A JP S57103333A
Authority
JP
Japan
Prior art keywords
wiring layer
film
covered
insulating film
spionglass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17932180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS646543B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Shohei Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17932180A priority Critical patent/JPS57103333A/ja
Publication of JPS57103333A publication Critical patent/JPS57103333A/ja
Publication of JPS646543B2 publication Critical patent/JPS646543B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP17932180A 1980-12-18 1980-12-18 Manufacture of semiconductor device Granted JPS57103333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17932180A JPS57103333A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17932180A JPS57103333A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57103333A true JPS57103333A (en) 1982-06-26
JPS646543B2 JPS646543B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-02-03

Family

ID=16063785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17932180A Granted JPS57103333A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57103333A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164342A (ja) * 1986-12-26 1988-07-07 Matsushita Electric Ind Co Ltd 絶縁膜形成方法
JPH0497527A (ja) * 1990-08-16 1992-03-30 Applied Materials Japan Kk 析出発生防止方法
WO2004012252A1 (ja) * 2002-07-30 2004-02-05 Tokyo Electron Limited 絶縁膜の形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542070A (en) * 1977-06-07 1979-01-09 Toshiba Corp Manufacture for semiconductor element
JPS556291A (en) * 1978-06-26 1980-01-17 Contraves Ag Digital interporation system for three pahse analog signal period

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542070A (en) * 1977-06-07 1979-01-09 Toshiba Corp Manufacture for semiconductor element
JPS556291A (en) * 1978-06-26 1980-01-17 Contraves Ag Digital interporation system for three pahse analog signal period

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164342A (ja) * 1986-12-26 1988-07-07 Matsushita Electric Ind Co Ltd 絶縁膜形成方法
JPH0497527A (ja) * 1990-08-16 1992-03-30 Applied Materials Japan Kk 析出発生防止方法
WO2004012252A1 (ja) * 2002-07-30 2004-02-05 Tokyo Electron Limited 絶縁膜の形成方法

Also Published As

Publication number Publication date
JPS646543B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-02-03

Similar Documents

Publication Publication Date Title
JPS57176746A (en) Semiconductor integrated circuit and manufacture thereof
JPS5477081A (en) Semiconductor device and production of the same
JPS57100748A (en) Manufacture of semiconductor device
JPS57103333A (en) Manufacture of semiconductor device
JPS55138859A (en) Multilayer wiring type semiconductor device
JPS57208182A (en) Manufacture of phtoelectric converter
JPS561547A (en) Semiconductor device
JPS6447055A (en) Manufacture of semiconductor device
JPH0618239B2 (ja) 半導体装置
JPS5624939A (en) Manufacture of semiconductor device
JPS641256A (en) Manufacture of semiconductor device
JPS5797649A (en) Manufacture of semiconductor device
JPS5779648A (en) Multilayer wiring of semiconductor device
JPH0419707B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS57111046A (en) Multilayer wiring layer
JPS5676548A (en) Semiconductor device
JPS6411379A (en) Superconducting film structure
JPS647610A (en) Forming method for soi structure
JPS56161655A (en) Multilayer aluminum wiring for semiconductor device
JPS57152144A (en) Semiconductor device
JPS5461490A (en) Multi-layer wiring forming method in semiconductor device
JPS56146254A (en) Manufacture of semiconductor device
JPS5650538A (en) Formation of multilayered wiring structure
JPS5789242A (en) Fabrication of semiconductor device
JPS6421965A (en) Mos transistor