JPS5710266A - Mis field effect semiconductor device - Google Patents

Mis field effect semiconductor device

Info

Publication number
JPS5710266A
JPS5710266A JP8488480A JP8488480A JPS5710266A JP S5710266 A JPS5710266 A JP S5710266A JP 8488480 A JP8488480 A JP 8488480A JP 8488480 A JP8488480 A JP 8488480A JP S5710266 A JPS5710266 A JP S5710266A
Authority
JP
Japan
Prior art keywords
source
drain regions
type
gate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8488480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6331945B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
Takashi Matsumoto
Haruhisa Mori
Kunihiko Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8488480A priority Critical patent/JPS5710266A/ja
Publication of JPS5710266A publication Critical patent/JPS5710266A/ja
Publication of JPS6331945B2 publication Critical patent/JPS6331945B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP8488480A 1980-06-23 1980-06-23 Mis field effect semiconductor device Granted JPS5710266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8488480A JPS5710266A (en) 1980-06-23 1980-06-23 Mis field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8488480A JPS5710266A (en) 1980-06-23 1980-06-23 Mis field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5710266A true JPS5710266A (en) 1982-01-19
JPS6331945B2 JPS6331945B2 (enrdf_load_stackoverflow) 1988-06-27

Family

ID=13843183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8488480A Granted JPS5710266A (en) 1980-06-23 1980-06-23 Mis field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710266A (enrdf_load_stackoverflow)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158971A (ja) * 1982-03-16 1983-09-21 Seiko Epson Corp 薄膜半導体装置
JPS58178564A (ja) * 1982-04-13 1983-10-19 Seiko Epson Corp 薄膜トランジスタ
JPS58182272A (ja) * 1982-04-19 1983-10-25 Seiko Epson Corp 薄膜トランジスタ
JPS62281473A (ja) * 1986-05-30 1987-12-07 Sony Corp 電界効果型トランジスタの製法
US5116771A (en) * 1989-03-20 1992-05-26 Massachusetts Institute Of Technology Thick contacts for ultra-thin silicon on insulator films
US5124768A (en) * 1982-04-13 1992-06-23 Seiko Epson Corporation Thin film transistor and active matrix assembly including same
US5281840A (en) * 1991-03-28 1994-01-25 Honeywell Inc. High mobility integrated drivers for active matrix displays
JPH06163900A (ja) * 1982-04-13 1994-06-10 Seiko Epson Corp 薄膜トランジスタ
EP0638938A3 (en) * 1993-08-10 1995-05-03 Philips Electronics Nv SOI transistor with improved high source.
US5485028A (en) * 1988-10-03 1996-01-16 Kabushiki Kaisha Toshiba Semiconductor device having a single crystal semiconductor layer formed on an insulating film
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US11380710B2 (en) 2017-03-08 2022-07-05 Sony Semiconductor Solutions Corporation Semiconductor device and method for manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5656675A (en) * 1979-10-16 1981-05-18 Toshiba Corp Semiconductor device on insulated substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5656675A (en) * 1979-10-16 1981-05-18 Toshiba Corp Semiconductor device on insulated substrate

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158971A (ja) * 1982-03-16 1983-09-21 Seiko Epson Corp 薄膜半導体装置
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US6242777B1 (en) 1982-04-13 2001-06-05 Seiko Epson Corporation Field effect transistor and liquid crystal devices including the same
US5124768A (en) * 1982-04-13 1992-06-23 Seiko Epson Corporation Thin film transistor and active matrix assembly including same
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
JPS58178564A (ja) * 1982-04-13 1983-10-19 Seiko Epson Corp 薄膜トランジスタ
US5294555A (en) * 1982-04-13 1994-03-15 Seiko Epson Corporation Method of manufacturing thin film transistor and active matrix assembly including same
JPH06163900A (ja) * 1982-04-13 1994-06-10 Seiko Epson Corp 薄膜トランジスタ
JPS58182272A (ja) * 1982-04-19 1983-10-25 Seiko Epson Corp 薄膜トランジスタ
JPS62281473A (ja) * 1986-05-30 1987-12-07 Sony Corp 電界効果型トランジスタの製法
US5485028A (en) * 1988-10-03 1996-01-16 Kabushiki Kaisha Toshiba Semiconductor device having a single crystal semiconductor layer formed on an insulating film
US5116771A (en) * 1989-03-20 1992-05-26 Massachusetts Institute Of Technology Thick contacts for ultra-thin silicon on insulator films
US5281840A (en) * 1991-03-28 1994-01-25 Honeywell Inc. High mobility integrated drivers for active matrix displays
EP0638938A3 (en) * 1993-08-10 1995-05-03 Philips Electronics Nv SOI transistor with improved high source.
US11380710B2 (en) 2017-03-08 2022-07-05 Sony Semiconductor Solutions Corporation Semiconductor device and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6331945B2 (enrdf_load_stackoverflow) 1988-06-27

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