JPS5710255A - Epoxy resin composition and resin sealed type semiconductor device - Google Patents

Epoxy resin composition and resin sealed type semiconductor device

Info

Publication number
JPS5710255A
JPS5710255A JP8270880A JP8270880A JPS5710255A JP S5710255 A JPS5710255 A JP S5710255A JP 8270880 A JP8270880 A JP 8270880A JP 8270880 A JP8270880 A JP 8270880A JP S5710255 A JPS5710255 A JP S5710255A
Authority
JP
Japan
Prior art keywords
resin
agent
molding
blended
additive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8270880A
Other languages
Japanese (ja)
Other versions
JPS5750064B2 (en
Inventor
Hirotoshi Iketani
Akiko Hatanaka
Shiyuichi Suzuki
Moriyasu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8270880A priority Critical patent/JPS5710255A/en
Priority to DE8181104126T priority patent/DE3163054D1/en
Priority to EP19810104126 priority patent/EP0041662B1/en
Publication of JPS5710255A publication Critical patent/JPS5710255A/en
Publication of JPS5750064B2 publication Critical patent/JPS5750064B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To enhance moisture resistance, high-temperature electrical characteristics, and molding characteristics of the device, by performing molding and sealing by using the composition wherein a specified amount of an organic phosphine compound as a hardening accelerator and a specified amount of a silicone compound having a silanol group as an additive are blended. CONSTITUTION:A resin component is obtained by blending novolak type phenol resin having 170-300 epoxy equivalent and a phenol resin hardener or acid anhydride such as phthalic anhydride, with an equivalent ratio of 0.5-1.5 with respect to an epoxy group number. For the hardening accelerator, it is desirable to blend 0.01-5wt% of triphenylphosphine to the resin. For the additive, 0.05-5wt% of, e.g., a methylphenylpolysiloxane wherein two or more silanol groups are contained in one molecule is added to the resin. With said components, are blended an inorganic filling agent such as, e.g., silica powder and the like and the resin composition wherein mold releasing agent, coloring agent, and coupling agent are appropriately mixed as necessary, and the molding material is obtained. Thus, the high quality, highly reliable resin sealing device can be obtained.
JP8270880A 1980-06-05 1980-06-20 Epoxy resin composition and resin sealed type semiconductor device Granted JPS5710255A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8270880A JPS5710255A (en) 1980-06-20 1980-06-20 Epoxy resin composition and resin sealed type semiconductor device
DE8181104126T DE3163054D1 (en) 1980-06-05 1981-05-29 Resin encapsulation type semiconductor device
EP19810104126 EP0041662B1 (en) 1980-06-05 1981-05-29 Resin encapsulation type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8270880A JPS5710255A (en) 1980-06-20 1980-06-20 Epoxy resin composition and resin sealed type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5710255A true JPS5710255A (en) 1982-01-19
JPS5750064B2 JPS5750064B2 (en) 1982-10-25

Family

ID=13781896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8270880A Granted JPS5710255A (en) 1980-06-05 1980-06-20 Epoxy resin composition and resin sealed type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710255A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221223A (en) * 1985-03-27 1986-10-01 Toshiba Corp Epoxy resin composition for sealing semiconductor
JPS6259626A (en) * 1985-09-10 1987-03-16 Shin Etsu Chem Co Ltd Epoxy resin composition
JPS63145323A (en) * 1986-12-09 1988-06-17 Sumitomo Bakelite Co Ltd Epoxy resin molding material for sealing semiconductor
JPH0684922U (en) * 1993-05-26 1994-12-06 中国パール販売株式会社 Bento container
JPH0770408A (en) * 1994-03-16 1995-03-14 Nitto Denko Corp Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221223A (en) * 1985-03-27 1986-10-01 Toshiba Corp Epoxy resin composition for sealing semiconductor
JPS6325608B2 (en) * 1985-03-27 1988-05-26 Tokyo Shibaura Electric Co
JPS6259626A (en) * 1985-09-10 1987-03-16 Shin Etsu Chem Co Ltd Epoxy resin composition
JPS6325012B2 (en) * 1985-09-10 1988-05-24 Shinetsu Chem Ind Co
JPS63145323A (en) * 1986-12-09 1988-06-17 Sumitomo Bakelite Co Ltd Epoxy resin molding material for sealing semiconductor
JPH0684922U (en) * 1993-05-26 1994-12-06 中国パール販売株式会社 Bento container
JPH0770408A (en) * 1994-03-16 1995-03-14 Nitto Denko Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5750064B2 (en) 1982-10-25

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