JPS57102015A - Pattern formation - Google Patents
Pattern formationInfo
- Publication number
- JPS57102015A JPS57102015A JP55177266A JP17726680A JPS57102015A JP S57102015 A JPS57102015 A JP S57102015A JP 55177266 A JP55177266 A JP 55177266A JP 17726680 A JP17726680 A JP 17726680A JP S57102015 A JPS57102015 A JP S57102015A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- substrate
- transparent conductive
- ultraviolet rays
- permeability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007261 regionalization Effects 0.000 title 1
- 239000011347 resin Substances 0.000 abstract 4
- 229920005989 resin Polymers 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 230000035699 permeability Effects 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
Landscapes
- Liquid Crystal (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55177266A JPS57102015A (en) | 1980-12-17 | 1980-12-17 | Pattern formation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55177266A JPS57102015A (en) | 1980-12-17 | 1980-12-17 | Pattern formation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57102015A true JPS57102015A (en) | 1982-06-24 |
JPH0361931B2 JPH0361931B2 (enrdf_load_stackoverflow) | 1991-09-24 |
Family
ID=16028048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55177266A Granted JPS57102015A (en) | 1980-12-17 | 1980-12-17 | Pattern formation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57102015A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59176741A (ja) * | 1983-03-28 | 1984-10-06 | Hoya Corp | 透光性薄膜のパタ−ン形成法 |
JPS60233653A (ja) * | 1984-05-07 | 1985-11-20 | Stanley Electric Co Ltd | 写真蝕刻方法 |
WO2001037246A1 (fr) * | 1999-11-16 | 2001-05-25 | Citizen Watch Co., Ltd. | Afficheur |
-
1980
- 1980-12-17 JP JP55177266A patent/JPS57102015A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59176741A (ja) * | 1983-03-28 | 1984-10-06 | Hoya Corp | 透光性薄膜のパタ−ン形成法 |
JPS60233653A (ja) * | 1984-05-07 | 1985-11-20 | Stanley Electric Co Ltd | 写真蝕刻方法 |
WO2001037246A1 (fr) * | 1999-11-16 | 2001-05-25 | Citizen Watch Co., Ltd. | Afficheur |
US7012589B1 (en) | 1999-11-16 | 2006-03-14 | Citizen Watch Co., Ltd. | Display |
Also Published As
Publication number | Publication date |
---|---|
JPH0361931B2 (enrdf_load_stackoverflow) | 1991-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57190912A (en) | Production of color filter | |
JPS5595324A (en) | Manufacturing method of semiconductor device | |
JPS57102015A (en) | Pattern formation | |
JPS5339075A (en) | Step and repeat exposure method of masks | |
JPS54134561A (en) | Pattern forming method | |
JPS5259580A (en) | Photo etching method | |
JPS57109331A (en) | Formation of resist pattern | |
JPS5339060A (en) | Lot number marking method to wafers | |
JPS5347825A (en) | Photoresist exposure | |
JPS52143769A (en) | Removing method of positive type photo resist | |
JPS5574544A (en) | Photo mask correcting method | |
JPS5724538A (en) | Preparation of semiconductor device | |
JPS5621328A (en) | Method of making pattern | |
JPS53122427A (en) | Forming method for photo-resist pattern | |
JPS5272175A (en) | Mask patterning of resist meterial | |
JPS52150976A (en) | Making method of etching mask | |
JPS5255867A (en) | Exposure method | |
JPS5710232A (en) | Forming method for resist pattern | |
JPS5475989A (en) | Pattern production method | |
JPS57146247A (en) | Water-soluble photoresist | |
JPS5380994A (en) | Lift-off method | |
JPS533821A (en) | Exposure method | |
JPS5768834A (en) | Photographic etching method | |
JPS5464476A (en) | Exposing method | |
JPS57212445A (en) | Production of photomask |