JPS5694772A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5694772A
JPS5694772A JP17101279A JP17101279A JPS5694772A JP S5694772 A JPS5694772 A JP S5694772A JP 17101279 A JP17101279 A JP 17101279A JP 17101279 A JP17101279 A JP 17101279A JP S5694772 A JPS5694772 A JP S5694772A
Authority
JP
Japan
Prior art keywords
metal
ion
semiconductor
injection
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17101279A
Other languages
Japanese (ja)
Other versions
JPS6250989B2 (en
Inventor
Takashi Ito
Takao Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17101279A priority Critical patent/JPS5694772A/en
Publication of JPS5694772A publication Critical patent/JPS5694772A/en
Publication of JPS6250989B2 publication Critical patent/JPS6250989B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To secure performance and stability by a method wherein ion is injected into a substrate through an insulating film attached onto a semiconductor substrate, the 1st semiconductor attached onto this insulating film and a metallic layer and thereafter, the 2nd semiconductor or a metallic layer is laid upon and the 1st, 2nd semiconductors or a metallic layer are formed. CONSTITUTION:An insulating layer 2 is formed on a semiconductor substrate 1 and thereupon, a semiconductor or a metal 5 is attached. And ion is injected into the surface of the substrate 1 through the metal 5 and the insulating layer 2. And thereafter, a semiconductor or a metal 8 is attached onto the metal 5 to perform a pattern forming. An ion injection is performed to an ion injection area 7 from above the metal 5, as a result, the insulating layer 2 is not polluted and after the injection, a sufficient washing can be performed. And further, the thickness of the metal 5 can be made so thin as the pollution during an injection process does not reach the insulating layer 2, accordingly, it is better to raise the injection ion energy somewhat higher than the existing method, thus, obtaining a sharp ion distribution 9.
JP17101279A 1979-12-28 1979-12-28 Manufacturing method of semiconductor device Granted JPS5694772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17101279A JPS5694772A (en) 1979-12-28 1979-12-28 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17101279A JPS5694772A (en) 1979-12-28 1979-12-28 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5694772A true JPS5694772A (en) 1981-07-31
JPS6250989B2 JPS6250989B2 (en) 1987-10-28

Family

ID=15915453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17101279A Granted JPS5694772A (en) 1979-12-28 1979-12-28 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5694772A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01173757A (en) * 1987-12-28 1989-07-10 Fujitsu Ltd Manufacture of mis semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01173757A (en) * 1987-12-28 1989-07-10 Fujitsu Ltd Manufacture of mis semiconductor device

Also Published As

Publication number Publication date
JPS6250989B2 (en) 1987-10-28

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