JPS5687317A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5687317A
JPS5687317A JP16407279A JP16407279A JPS5687317A JP S5687317 A JPS5687317 A JP S5687317A JP 16407279 A JP16407279 A JP 16407279A JP 16407279 A JP16407279 A JP 16407279A JP S5687317 A JPS5687317 A JP S5687317A
Authority
JP
Japan
Prior art keywords
semiconductor
single crystalline
crystalline semiconductor
layer
insulator layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16407279A
Other languages
Japanese (ja)
Inventor
Akira Yamamoto
Noburo Tanimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16407279A priority Critical patent/JPS5687317A/en
Publication of JPS5687317A publication Critical patent/JPS5687317A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To easily form a single crystalline semiconductor on an insulator by a method wherein a polycrystalline semiconductor is heaped on the single crystalline semiconductor substrate provided with an insulator layer in a prescribed shape and single-crystallized by applying an irradiation of laser to a part touched with substrate. CONSTITUTION:The insulator layer 2 in the prescribed shape is formed on the single crystalline semiconductor substrate 1, then, the polycrystalline semiconductor 4 is heaped over the whole surface, and the laser 5 is increasingly applied to the part contacted with the exposed part of the semiconductor substrate to change the whole body to a semiconductor layer 6 single-crystallized. Whereby the single crystalline semiconductor layer excellent in crystalline property can easily be formed on the insulator layer.
JP16407279A 1979-12-19 1979-12-19 Manufacture of semiconductor device Pending JPS5687317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16407279A JPS5687317A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16407279A JPS5687317A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5687317A true JPS5687317A (en) 1981-07-15

Family

ID=15786240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16407279A Pending JPS5687317A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687317A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837916A (en) * 1981-08-31 1983-03-05 Fujitsu Ltd Manufacture of semiconductor device
JPS6031287A (en) * 1983-07-29 1985-02-18 Matsushita Electric Ind Co Ltd Semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837916A (en) * 1981-08-31 1983-03-05 Fujitsu Ltd Manufacture of semiconductor device
JPS6031287A (en) * 1983-07-29 1985-02-18 Matsushita Electric Ind Co Ltd Semiconductor laser device

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