JPS5687345A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS5687345A
JPS5687345A JP16426479A JP16426479A JPS5687345A JP S5687345 A JPS5687345 A JP S5687345A JP 16426479 A JP16426479 A JP 16426479A JP 16426479 A JP16426479 A JP 16426479A JP S5687345 A JPS5687345 A JP S5687345A
Authority
JP
Japan
Prior art keywords
film
polycrystalline
integrated circuit
melting point
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16426479A
Other languages
English (en)
Inventor
Keizo Kobayashi
Osamu Kudo
Yukinobu Murao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16426479A priority Critical patent/JPS5687345A/ja
Publication of JPS5687345A publication Critical patent/JPS5687345A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP16426479A 1979-12-18 1979-12-18 Manufacture of semiconductor integrated circuit Pending JPS5687345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16426479A JPS5687345A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16426479A JPS5687345A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5687345A true JPS5687345A (en) 1981-07-15

Family

ID=15789778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16426479A Pending JPS5687345A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5687345A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7554055B2 (en) 2005-05-03 2009-06-30 Hitachi Global Storage Technologies Netherlands B.V. Method for making ohmic contact to silicon structures with low thermal loads

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7554055B2 (en) 2005-05-03 2009-06-30 Hitachi Global Storage Technologies Netherlands B.V. Method for making ohmic contact to silicon structures with low thermal loads

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