JPS5678171A - Manufacture of field effect transistor of shottky barrier gate type - Google Patents
Manufacture of field effect transistor of shottky barrier gate typeInfo
- Publication number
- JPS5678171A JPS5678171A JP15694580A JP15694580A JPS5678171A JP S5678171 A JPS5678171 A JP S5678171A JP 15694580 A JP15694580 A JP 15694580A JP 15694580 A JP15694580 A JP 15694580A JP S5678171 A JPS5678171 A JP S5678171A
- Authority
- JP
- Japan
- Prior art keywords
- attached
- gate electrode
- metal
- gate
- metals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 6
- 229910052751 metal Inorganic materials 0.000 abstract 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To separate source and drain regions with low resistance and a gate electrode as long as a distance enough to obtain a gate withstand voltage by a method wherein insulators are provided around the gate electrode. CONSTITUTION:An N type GaAs layer 2 is formed on a semi-insulated GaAs substrate 1. The layer 2 on its top is attached with a guard film 7 and perforated for a gate electrode and then attached with a gate metal capable of being applied an anodic oxidation. In the following, a metal 16 which can not be applied the anodic oxidation is attached onto the metal 3. A metal 17 possible to be anode-oxidized is attached around the gate electrode comprising the metals 3 and 16, and then, is completely oxidized by an anode oxidizing method. Then, using the masking action against ion beams of the metals 3 and 16, impurity ions are injected to form the source region 5 and drain region 6 with low resistances which have an electron concentration higher and thickness larger than those of the channel region 2. In addition, ohmic electrodes 11, 12 are formed and then, attached with gold to form electrodes 14, 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15694580A JPS5840347B2 (en) | 1980-11-10 | 1980-11-10 | Manufacturing method of Schottky barrier gate field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15694580A JPS5840347B2 (en) | 1980-11-10 | 1980-11-10 | Manufacturing method of Schottky barrier gate field effect transistor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6079273A Division JPS5629392B2 (en) | 1973-06-01 | 1973-06-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5678171A true JPS5678171A (en) | 1981-06-26 |
| JPS5840347B2 JPS5840347B2 (en) | 1983-09-05 |
Family
ID=15638771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15694580A Expired JPS5840347B2 (en) | 1980-11-10 | 1980-11-10 | Manufacturing method of Schottky barrier gate field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5840347B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61138436U (en) * | 1985-02-13 | 1986-08-28 | ||
| JPS6281230A (en) * | 1985-10-07 | 1987-04-14 | Orii:Kk | Feeding device for work for press working |
-
1980
- 1980-11-10 JP JP15694580A patent/JPS5840347B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5840347B2 (en) | 1983-09-05 |
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