JPS6412580A - Hetero-junction field-effect transistor - Google Patents

Hetero-junction field-effect transistor

Info

Publication number
JPS6412580A
JPS6412580A JP17005487A JP17005487A JPS6412580A JP S6412580 A JPS6412580 A JP S6412580A JP 17005487 A JP17005487 A JP 17005487A JP 17005487 A JP17005487 A JP 17005487A JP S6412580 A JPS6412580 A JP S6412580A
Authority
JP
Japan
Prior art keywords
layer
dug
parts
hetero
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17005487A
Other languages
Japanese (ja)
Inventor
Tatsuo Tokue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17005487A priority Critical patent/JPS6412580A/en
Publication of JPS6412580A publication Critical patent/JPS6412580A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To avoid the increase of the contact resistances between electrode metal alloy layers and a two-dimensional electron gas layer and reduce the source resistance by a method wherein a high impurity concentration semiconductor layer inside an ohmic region is dug and the alloy layers are formed in the dug parts. CONSTITUTION:An undoped GaAs layer 2, an n<+>type AlGaAs layer 3 and n<+>type GaAs layer 4 are successively built up on an semi-insulating GaAs layer 1. A two-dimensional electron gas layer 5 which is to be a channel is formed on the layer 2 side in the hetero-junction between the layer 2 and layer 3. A gate electrode 8 made of metal which has Schottky contact with the layer 3 is formed on the part from which the layer 4 is removed. The parts of the layer 4 which are to be source and drain regions are dug to predetermined depths and metal for forming source and drain electrodes 6 and 7 is applied to the dug parts and layers brought into contact with the layer 5 are alloyed. With this constitution, the contact resistances between the electrode metal alloy layers and the layer 5 can be lowered and the source resistance can be reduced.
JP17005487A 1987-07-07 1987-07-07 Hetero-junction field-effect transistor Pending JPS6412580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17005487A JPS6412580A (en) 1987-07-07 1987-07-07 Hetero-junction field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17005487A JPS6412580A (en) 1987-07-07 1987-07-07 Hetero-junction field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6412580A true JPS6412580A (en) 1989-01-17

Family

ID=15897768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17005487A Pending JPS6412580A (en) 1987-07-07 1987-07-07 Hetero-junction field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6412580A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148255A1 (en) * 2013-03-19 2014-09-25 シャープ株式会社 Nitride semiconductor device and method for manufacturing nitride semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148255A1 (en) * 2013-03-19 2014-09-25 シャープ株式会社 Nitride semiconductor device and method for manufacturing nitride semiconductor device

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