JPS5671980A - Schottky barrier gate type field effect transistor and preparation method thereof - Google Patents

Schottky barrier gate type field effect transistor and preparation method thereof

Info

Publication number
JPS5671980A
JPS5671980A JP14908679A JP14908679A JPS5671980A JP S5671980 A JPS5671980 A JP S5671980A JP 14908679 A JP14908679 A JP 14908679A JP 14908679 A JP14908679 A JP 14908679A JP S5671980 A JPS5671980 A JP S5671980A
Authority
JP
Japan
Prior art keywords
gate
etched
epitaxial layer
preparation
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14908679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6115596B2 (enrdf_load_stackoverflow
Inventor
Masao Sumiyoshi
Takuji Shimanoe
Aiichiro Nara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14908679A priority Critical patent/JPS5671980A/ja
Publication of JPS5671980A publication Critical patent/JPS5671980A/ja
Publication of JPS6115596B2 publication Critical patent/JPS6115596B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP14908679A 1979-11-15 1979-11-15 Schottky barrier gate type field effect transistor and preparation method thereof Granted JPS5671980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14908679A JPS5671980A (en) 1979-11-15 1979-11-15 Schottky barrier gate type field effect transistor and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14908679A JPS5671980A (en) 1979-11-15 1979-11-15 Schottky barrier gate type field effect transistor and preparation method thereof

Publications (2)

Publication Number Publication Date
JPS5671980A true JPS5671980A (en) 1981-06-15
JPS6115596B2 JPS6115596B2 (enrdf_load_stackoverflow) 1986-04-24

Family

ID=15467387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14908679A Granted JPS5671980A (en) 1979-11-15 1979-11-15 Schottky barrier gate type field effect transistor and preparation method thereof

Country Status (1)

Country Link
JP (1) JPS5671980A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02122632A (ja) * 1988-11-01 1990-05-10 Mitsubishi Electric Corp 電界効果トランジスタの製造方法
FR2685819A1 (fr) * 1991-12-31 1993-07-02 Thomson Composants Microondes Procede de realisation d'un transistor a effet de champ hyperfrequence.
US5508539A (en) * 1994-04-29 1996-04-16 Motorola, Inc. Elevated-gate field effect transistor structure and fabrication method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63143609A (ja) * 1986-12-08 1988-06-15 Nikon Corp 移動体の位置決め装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02122632A (ja) * 1988-11-01 1990-05-10 Mitsubishi Electric Corp 電界効果トランジスタの製造方法
FR2685819A1 (fr) * 1991-12-31 1993-07-02 Thomson Composants Microondes Procede de realisation d'un transistor a effet de champ hyperfrequence.
EP0550317A1 (fr) * 1991-12-31 1993-07-07 Thomson Composants Microondes Procédé de réalisation d'un transistor à effet de champ hyperfréquence
US5508539A (en) * 1994-04-29 1996-04-16 Motorola, Inc. Elevated-gate field effect transistor structure and fabrication method
US5631175A (en) * 1994-04-29 1997-05-20 Motorola, Inc. Method for fabricating an elevated-gate field effect transistor

Also Published As

Publication number Publication date
JPS6115596B2 (enrdf_load_stackoverflow) 1986-04-24

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