JPS5670662A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5670662A
JPS5670662A JP14666879A JP14666879A JPS5670662A JP S5670662 A JPS5670662 A JP S5670662A JP 14666879 A JP14666879 A JP 14666879A JP 14666879 A JP14666879 A JP 14666879A JP S5670662 A JPS5670662 A JP S5670662A
Authority
JP
Japan
Prior art keywords
region
type
drain
high density
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14666879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241428B2 (enrdf_load_stackoverflow
Inventor
Toshiyuki Suzuki
Hiroshi Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14666879A priority Critical patent/JPS5670662A/ja
Priority to US06/195,683 priority patent/US4394674A/en
Publication of JPS5670662A publication Critical patent/JPS5670662A/ja
Publication of JPS6241428B2 publication Critical patent/JPS6241428B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP14666879A 1979-10-09 1979-11-13 Insulated gate type field effect transistor Granted JPS5670662A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14666879A JPS5670662A (en) 1979-11-13 1979-11-13 Insulated gate type field effect transistor
US06/195,683 US4394674A (en) 1979-10-09 1980-10-09 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14666879A JPS5670662A (en) 1979-11-13 1979-11-13 Insulated gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5670662A true JPS5670662A (en) 1981-06-12
JPS6241428B2 JPS6241428B2 (enrdf_load_stackoverflow) 1987-09-02

Family

ID=15412907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14666879A Granted JPS5670662A (en) 1979-10-09 1979-11-13 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5670662A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60202967A (ja) * 1984-02-22 1985-10-14 ゼネラル・エレクトリック・カンパニイ 縦型ｍｏｓｆｅｔ装置の製造方法
US5304827A (en) * 1991-10-15 1994-04-19 Texas Instruments Incorporated Performance lateral double-diffused MOS transistor
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US7692239B2 (en) 2003-03-10 2010-04-06 Fuji Electric Device Technology Co., Ltd. MIS-type semiconductor device
JP2011199153A (ja) * 2010-03-23 2011-10-06 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60202967A (ja) * 1984-02-22 1985-10-14 ゼネラル・エレクトリック・カンパニイ 縦型ｍｏｓｆｅｔ装置の製造方法
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5514608A (en) * 1991-05-06 1996-05-07 Siliconix Incorporated Method of making lightly-doped drain DMOS with improved breakdown characteristics
US5304827A (en) * 1991-10-15 1994-04-19 Texas Instruments Incorporated Performance lateral double-diffused MOS transistor
US5382535A (en) * 1991-10-15 1995-01-17 Texas Instruments Incorporated Method of fabricating performance lateral double-diffused MOS transistor
US7692239B2 (en) 2003-03-10 2010-04-06 Fuji Electric Device Technology Co., Ltd. MIS-type semiconductor device
JP2011199153A (ja) * 2010-03-23 2011-10-06 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS6241428B2 (enrdf_load_stackoverflow) 1987-09-02

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