JPS5654083A - Semiconductor laser apparatus - Google Patents

Semiconductor laser apparatus

Info

Publication number
JPS5654083A
JPS5654083A JP12920779A JP12920779A JPS5654083A JP S5654083 A JPS5654083 A JP S5654083A JP 12920779 A JP12920779 A JP 12920779A JP 12920779 A JP12920779 A JP 12920779A JP S5654083 A JPS5654083 A JP S5654083A
Authority
JP
Japan
Prior art keywords
layers
layer
refractive index
those
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12920779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237834B2 (enrdf_load_stackoverflow
Inventor
Isao Hino
Kuniaki Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12920779A priority Critical patent/JPS5654083A/ja
Publication of JPS5654083A publication Critical patent/JPS5654083A/ja
Publication of JPS6237834B2 publication Critical patent/JPS6237834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP12920779A 1979-10-05 1979-10-05 Semiconductor laser apparatus Granted JPS5654083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12920779A JPS5654083A (en) 1979-10-05 1979-10-05 Semiconductor laser apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12920779A JPS5654083A (en) 1979-10-05 1979-10-05 Semiconductor laser apparatus

Publications (2)

Publication Number Publication Date
JPS5654083A true JPS5654083A (en) 1981-05-13
JPS6237834B2 JPS6237834B2 (enrdf_load_stackoverflow) 1987-08-14

Family

ID=15003775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12920779A Granted JPS5654083A (en) 1979-10-05 1979-10-05 Semiconductor laser apparatus

Country Status (1)

Country Link
JP (1) JPS5654083A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079785A (ja) * 1983-10-06 1985-05-07 Agency Of Ind Science & Technol 半導体レ−ザ装置
JPS61194788A (ja) * 1985-02-22 1986-08-29 Toshiba Corp 半導体発光素子の製造方法
FR2628891A1 (fr) * 1988-03-16 1989-09-22 Mitsubishi Electric Corp Laser a semiconducteurs

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088989A (enrdf_load_stackoverflow) * 1973-12-10 1975-07-17
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5493381A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088989A (enrdf_load_stackoverflow) * 1973-12-10 1975-07-17
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5493381A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6079785A (ja) * 1983-10-06 1985-05-07 Agency Of Ind Science & Technol 半導体レ−ザ装置
JPS61194788A (ja) * 1985-02-22 1986-08-29 Toshiba Corp 半導体発光素子の製造方法
FR2628891A1 (fr) * 1988-03-16 1989-09-22 Mitsubishi Electric Corp Laser a semiconducteurs

Also Published As

Publication number Publication date
JPS6237834B2 (enrdf_load_stackoverflow) 1987-08-14

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