JPS5654071A - Insulated gate field-effect transistor - Google Patents

Insulated gate field-effect transistor

Info

Publication number
JPS5654071A
JPS5654071A JP13014379A JP13014379A JPS5654071A JP S5654071 A JPS5654071 A JP S5654071A JP 13014379 A JP13014379 A JP 13014379A JP 13014379 A JP13014379 A JP 13014379A JP S5654071 A JPS5654071 A JP S5654071A
Authority
JP
Japan
Prior art keywords
region
type
layer
diffusion
surrounded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13014379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241427B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Sakuma
Toshiyuki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13014379A priority Critical patent/JPS5654071A/ja
Priority to US06/195,683 priority patent/US4394674A/en
Publication of JPS5654071A publication Critical patent/JPS5654071A/ja
Publication of JPS6241427B2 publication Critical patent/JPS6241427B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP13014379A 1979-10-09 1979-10-09 Insulated gate field-effect transistor Granted JPS5654071A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP13014379A JPS5654071A (en) 1979-10-09 1979-10-09 Insulated gate field-effect transistor
US06/195,683 US4394674A (en) 1979-10-09 1980-10-09 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13014379A JPS5654071A (en) 1979-10-09 1979-10-09 Insulated gate field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5654071A true JPS5654071A (en) 1981-05-13
JPS6241427B2 JPS6241427B2 (enrdf_load_stackoverflow) 1987-09-02

Family

ID=15026991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13014379A Granted JPS5654071A (en) 1979-10-09 1979-10-09 Insulated gate field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5654071A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0121096A3 (en) * 1983-03-31 1986-02-12 International Business Machines Corporation Semiconductor contact structure
US5229633A (en) * 1987-06-08 1993-07-20 U.S. Philips Corporation High voltage lateral enhancement IGFET
US5304827A (en) * 1991-10-15 1994-04-19 Texas Instruments Incorporated Performance lateral double-diffused MOS transistor
JP2012253230A (ja) * 2011-06-03 2012-12-20 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0121096A3 (en) * 1983-03-31 1986-02-12 International Business Machines Corporation Semiconductor contact structure
US5229633A (en) * 1987-06-08 1993-07-20 U.S. Philips Corporation High voltage lateral enhancement IGFET
US5304827A (en) * 1991-10-15 1994-04-19 Texas Instruments Incorporated Performance lateral double-diffused MOS transistor
US5382535A (en) * 1991-10-15 1995-01-17 Texas Instruments Incorporated Method of fabricating performance lateral double-diffused MOS transistor
JP2012253230A (ja) * 2011-06-03 2012-12-20 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6241427B2 (enrdf_load_stackoverflow) 1987-09-02

Similar Documents

Publication Publication Date Title
JPS55148464A (en) Mos semiconductor device and its manufacture
JPS6446981A (en) Semiconductor device
MY123831A (en) Method for manufacturing a semiconductor device
TW241384B (enrdf_load_stackoverflow)
JPS57206073A (en) Mis semiconductor device
EP0148595A3 (en) Method of fabricating mesa mosfet using overhang mask and resulting structure
EP0077737A3 (en) Low capacitance field effect transistor
JPS5654071A (en) Insulated gate field-effect transistor
JPS5691470A (en) Semiconductor
JPS5731177A (en) Insulated gate type field effect transistor
JPS56126977A (en) Junction type field effect transistor
JPS5727069A (en) Mos type simiconductor device
JPS55130170A (en) Semiconductor device and method of fabricating the same
JPS5688356A (en) Manufacture of memory cell
JPS56146276A (en) Insulating gate type field-effect transistor
JPS5265683A (en) Production of insulated gate type mis semiconductor device
JPS55108773A (en) Insulating gate type field effect transistor
JPS5563876A (en) Field-effect semiconductor device
JPS6437059A (en) Manufacture of semiconductor device
JPS5793562A (en) Semiconductor device
JPS6465875A (en) Thin film transistor and manufacture thereof
JPS57202782A (en) Formation of gate electrode
JPS57199268A (en) Junction type field effect transistor
JPS57211779A (en) Field effect transistor
JPS57173965A (en) Semiconductor device