JPS5650511A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5650511A
JPS5650511A JP12540179A JP12540179A JPS5650511A JP S5650511 A JPS5650511 A JP S5650511A JP 12540179 A JP12540179 A JP 12540179A JP 12540179 A JP12540179 A JP 12540179A JP S5650511 A JPS5650511 A JP S5650511A
Authority
JP
Japan
Prior art keywords
thickness
film
laser beam
insulating film
efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12540179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS634346B2 (enExample
Inventor
Masanobu Miyao
Hiroshi Tamura
Masao Tamura
Osamu Okura
Nobuyoshi Kashu
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12540179A priority Critical patent/JPS5650511A/ja
Publication of JPS5650511A publication Critical patent/JPS5650511A/ja
Publication of JPS634346B2 publication Critical patent/JPS634346B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P34/42—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
JP12540179A 1979-10-01 1979-10-01 Manufacture of semiconductor device Granted JPS5650511A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12540179A JPS5650511A (en) 1979-10-01 1979-10-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12540179A JPS5650511A (en) 1979-10-01 1979-10-01 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5650511A true JPS5650511A (en) 1981-05-07
JPS634346B2 JPS634346B2 (enExample) 1988-01-28

Family

ID=14909211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12540179A Granted JPS5650511A (en) 1979-10-01 1979-10-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5650511A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595484U (enExample) * 1979-12-27 1980-07-02

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546503A (en) * 1978-09-28 1980-04-01 Toshiba Corp Method of making semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546503A (en) * 1978-09-28 1980-04-01 Toshiba Corp Method of making semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595484U (enExample) * 1979-12-27 1980-07-02

Also Published As

Publication number Publication date
JPS634346B2 (enExample) 1988-01-28

Similar Documents

Publication Publication Date Title
JPS56160034A (en) Impurity diffusion
JPS5567132A (en) Method for manufacturing semiconductor device
JPS5548926A (en) Preparation of semiconductor device
JPS5650511A (en) Manufacture of semiconductor device
JPS56118366A (en) Preparation of semiconductor device
JPS57104218A (en) Fabrication of semiconductor device
JPS5696835A (en) Manufacture of semiconductor device
JPS5710267A (en) Semiconductor device
KR860007722A (ko) 개선된 절연피막처리방법 및 그 처리방법에 따라 제조된 웨이퍼와 집적회로
JPS5680126A (en) Formation of monocrystalline semiconductor
JPS56138920A (en) Method of selection and diffusion for impurities
JPS5633821A (en) Photoannealing method for semiconductor layer
JPS5687361A (en) Semiconductor device and its manufacture
JPS56105641A (en) Semiconductor device
JPS57133626A (en) Manufacture of semiconductor thin film
JPS5694671A (en) Manufacture of mis field-effect semiconductor device
JPS57180173A (en) Mis transistor and manufacture thereof
JPS57112013A (en) Manufacture of semiconductor device
JPS57112032A (en) Formation of insulating film
JPS5546503A (en) Method of making semiconductor device
JPS6151432B2 (enExample)
JPS56144544A (en) Manufacture of semiconductor device
JPS5643734A (en) Anneal method of polycrystalline silicon thin film
JPS57153429A (en) Manufacture of semiconductor device
JPS5693312A (en) Manufacture of semiconductor device