JPS5643794A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5643794A
JPS5643794A JP12029979A JP12029979A JPS5643794A JP S5643794 A JPS5643794 A JP S5643794A JP 12029979 A JP12029979 A JP 12029979A JP 12029979 A JP12029979 A JP 12029979A JP S5643794 A JPS5643794 A JP S5643794A
Authority
JP
Japan
Prior art keywords
layer
carrier
groove
thick
confining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12029979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237833B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12029979A priority Critical patent/JPS5643794A/ja
Publication of JPS5643794A publication Critical patent/JPS5643794A/ja
Publication of JPS6237833B2 publication Critical patent/JPS6237833B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP12029979A 1979-09-18 1979-09-18 Semiconductor laser Granted JPS5643794A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12029979A JPS5643794A (en) 1979-09-18 1979-09-18 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12029979A JPS5643794A (en) 1979-09-18 1979-09-18 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5643794A true JPS5643794A (en) 1981-04-22
JPS6237833B2 JPS6237833B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-08-14

Family

ID=14782789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12029979A Granted JPS5643794A (en) 1979-09-18 1979-09-18 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5643794A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114473A (ja) * 1981-12-26 1983-07-07 Fujitsu Ltd 半導体発光装置
JPS59189693A (ja) * 1983-04-12 1984-10-27 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS59231890A (ja) * 1983-06-14 1984-12-26 日立化成工業株式会社 スルホ−ル導体の形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114473A (ja) * 1981-12-26 1983-07-07 Fujitsu Ltd 半導体発光装置
JPS59189693A (ja) * 1983-04-12 1984-10-27 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS59231890A (ja) * 1983-06-14 1984-12-26 日立化成工業株式会社 スルホ−ル導体の形成方法

Also Published As

Publication number Publication date
JPS6237833B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-08-14

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