JPS5640242A - Mask for semiconductor device - Google Patents

Mask for semiconductor device

Info

Publication number
JPS5640242A
JPS5640242A JP11710679A JP11710679A JPS5640242A JP S5640242 A JPS5640242 A JP S5640242A JP 11710679 A JP11710679 A JP 11710679A JP 11710679 A JP11710679 A JP 11710679A JP S5640242 A JPS5640242 A JP S5640242A
Authority
JP
Japan
Prior art keywords
pattern
dimensions
letter
patterns
dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11710679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6232783B2 (enrdf_load_stackoverflow
Inventor
Mototsugu Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11710679A priority Critical patent/JPS5640242A/ja
Publication of JPS5640242A publication Critical patent/JPS5640242A/ja
Publication of JPS6232783B2 publication Critical patent/JPS6232783B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP11710679A 1979-09-11 1979-09-11 Mask for semiconductor device Granted JPS5640242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11710679A JPS5640242A (en) 1979-09-11 1979-09-11 Mask for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11710679A JPS5640242A (en) 1979-09-11 1979-09-11 Mask for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5640242A true JPS5640242A (en) 1981-04-16
JPS6232783B2 JPS6232783B2 (enrdf_load_stackoverflow) 1987-07-16

Family

ID=14703542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11710679A Granted JPS5640242A (en) 1979-09-11 1979-09-11 Mask for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5640242A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5960439A (ja) * 1982-09-30 1984-04-06 Fujitsu Ltd フオト・マスク
JPS59143159A (ja) * 1983-02-07 1984-08-16 Mitsubishi Electric Corp 写真製版技術におけるパタ−ン重ね合わせ方法
JPS60202933A (ja) * 1984-03-16 1985-10-14 Fujitsu Ltd レチクルの検査方法
JPH02159011A (ja) * 1988-12-13 1990-06-19 Fujitsu Ltd ホトリソグラフィのパターン寸法管理方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5960439A (ja) * 1982-09-30 1984-04-06 Fujitsu Ltd フオト・マスク
JPS59143159A (ja) * 1983-02-07 1984-08-16 Mitsubishi Electric Corp 写真製版技術におけるパタ−ン重ね合わせ方法
JPS60202933A (ja) * 1984-03-16 1985-10-14 Fujitsu Ltd レチクルの検査方法
JPH02159011A (ja) * 1988-12-13 1990-06-19 Fujitsu Ltd ホトリソグラフィのパターン寸法管理方法

Also Published As

Publication number Publication date
JPS6232783B2 (enrdf_load_stackoverflow) 1987-07-16

Similar Documents

Publication Publication Date Title
KR900700924A (ko) 레티클 마스크 제조 방법
KR930006840A (ko) 포토마스크 및 그것을 사용한 레지스터패턴 형성방법
TW200736588A (en) Polarization evaluation mask, polarization evaluation method and polarization determination device
KR850000787A (ko) 반도체소자 제작을 위한 포토마스크(Photomask) 레티클(Raticle)의 검사방법
US3798782A (en) Register mark punch system and method
JPS5640242A (en) Mask for semiconductor device
JPS5646534A (en) Manufacture of semiconductor device
KR0144082B1 (ko) 레티클 및 그 레티클을 사용한 가림막 세팅 방법
JPS57132008A (en) Measuring method for pattern size
JPS5691424A (en) Mask accuracy measuring pattern
JPS5623746A (en) Manufacture of semiconductor device
JPS55135837A (en) Manufacture of photomask
JPS52143774A (en) Negative positioning mechanism in reduction projecting and printing apparatus
KR950015579A (ko) 현상율 측정 패턴이 구비된 포토마스크 및 현상율 측정방법
JPS5657038A (en) Photomask for integrated circuit
KR950004418A (ko) 노광기의 촛점 및 평행도 측정 방법
JPS6421450A (en) Production of mask
JP2617613B2 (ja) 縮小投影露光装置用レチクル
KR950029843A (ko) 반도체 소자 제조용 포토마스크 및 이를 이용한 반도체 소자 패턴의 현상 균일도 체크 방법
KR0141946B1 (ko) 반도체 노광장비의 정렬도 검사장치
JPS56114949A (en) Photomask
JPS5619051A (en) Production of photo mask
JPS57176040A (en) Preparation of photomask
JPS5782754A (en) Inspection device for printed wiring substrate
JPS5559722A (en) Producing method of electron beam drawing photomask