JPS5638826A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5638826A
JPS5638826A JP11505579A JP11505579A JPS5638826A JP S5638826 A JPS5638826 A JP S5638826A JP 11505579 A JP11505579 A JP 11505579A JP 11505579 A JP11505579 A JP 11505579A JP S5638826 A JPS5638826 A JP S5638826A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
plasma
breakage
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11505579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6138854B2 (enrdf_load_stackoverflow
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11505579A priority Critical patent/JPS5638826A/ja
Publication of JPS5638826A publication Critical patent/JPS5638826A/ja
Publication of JPS6138854B2 publication Critical patent/JPS6138854B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP11505579A 1979-09-07 1979-09-07 Manufacture of semiconductor device Granted JPS5638826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11505579A JPS5638826A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11505579A JPS5638826A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5638826A true JPS5638826A (en) 1981-04-14
JPS6138854B2 JPS6138854B2 (enrdf_load_stackoverflow) 1986-09-01

Family

ID=14653051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11505579A Granted JPS5638826A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5638826A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281509A (zh) * 2018-01-30 2018-07-13 电子科技大学 氧化物半导体基光电探测器及提高其性能的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108281509A (zh) * 2018-01-30 2018-07-13 电子科技大学 氧化物半导体基光电探测器及提高其性能的方法
CN108281509B (zh) * 2018-01-30 2020-03-17 电子科技大学 氧化物半导体基光电探测器及提高其性能的方法

Also Published As

Publication number Publication date
JPS6138854B2 (enrdf_load_stackoverflow) 1986-09-01

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