JPS5637674A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5637674A
JPS5637674A JP11379779A JP11379779A JPS5637674A JP S5637674 A JPS5637674 A JP S5637674A JP 11379779 A JP11379779 A JP 11379779A JP 11379779 A JP11379779 A JP 11379779A JP S5637674 A JPS5637674 A JP S5637674A
Authority
JP
Japan
Prior art keywords
layer
trapezoidal shape
region
base
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11379779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6346583B2 (enrdf_load_stackoverflow
Inventor
Reiji Takashina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11379779A priority Critical patent/JPS5637674A/ja
Publication of JPS5637674A publication Critical patent/JPS5637674A/ja
Publication of JPS6346583B2 publication Critical patent/JPS6346583B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP11379779A 1979-09-05 1979-09-05 Manufacture of semiconductor device Granted JPS5637674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11379779A JPS5637674A (en) 1979-09-05 1979-09-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11379779A JPS5637674A (en) 1979-09-05 1979-09-05 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5637674A true JPS5637674A (en) 1981-04-11
JPS6346583B2 JPS6346583B2 (enrdf_load_stackoverflow) 1988-09-16

Family

ID=14621316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11379779A Granted JPS5637674A (en) 1979-09-05 1979-09-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5637674A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01174963U (enrdf_load_stackoverflow) * 1988-05-30 1989-12-13
JPH03296222A (ja) * 1990-04-13 1991-12-26 Nec Corp 半導体装置とその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01174963U (enrdf_load_stackoverflow) * 1988-05-30 1989-12-13
JPH03296222A (ja) * 1990-04-13 1991-12-26 Nec Corp 半導体装置とその製造方法

Also Published As

Publication number Publication date
JPS6346583B2 (enrdf_load_stackoverflow) 1988-09-16

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