JPS6346583B2 - - Google Patents
Info
- Publication number
- JPS6346583B2 JPS6346583B2 JP54113797A JP11379779A JPS6346583B2 JP S6346583 B2 JPS6346583 B2 JP S6346583B2 JP 54113797 A JP54113797 A JP 54113797A JP 11379779 A JP11379779 A JP 11379779A JP S6346583 B2 JPS6346583 B2 JP S6346583B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- base
- electrode
- polycrystalline silicon
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 238000007747 plating Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000012535 impurity Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- JVJQPDTXIALXOG-UHFFFAOYSA-N nitryl fluoride Chemical compound [O-][N+](F)=O JVJQPDTXIALXOG-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11379779A JPS5637674A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11379779A JPS5637674A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5637674A JPS5637674A (en) | 1981-04-11 |
| JPS6346583B2 true JPS6346583B2 (enrdf_load_stackoverflow) | 1988-09-16 |
Family
ID=14621316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11379779A Granted JPS5637674A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637674A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01174963U (enrdf_load_stackoverflow) * | 1988-05-30 | 1989-12-13 | ||
| JP3179087B2 (ja) * | 1990-04-13 | 2001-06-25 | 日本電気株式会社 | 半導体装置とその製造方法 |
-
1979
- 1979-09-05 JP JP11379779A patent/JPS5637674A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5637674A (en) | 1981-04-11 |
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