JPS5627929A - Electron beam projection - Google Patents

Electron beam projection

Info

Publication number
JPS5627929A
JPS5627929A JP10345479A JP10345479A JPS5627929A JP S5627929 A JPS5627929 A JP S5627929A JP 10345479 A JP10345479 A JP 10345479A JP 10345479 A JP10345479 A JP 10345479A JP S5627929 A JPS5627929 A JP S5627929A
Authority
JP
Japan
Prior art keywords
electron beam
photo resist
mark
positioning
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10345479A
Other languages
Japanese (ja)
Other versions
JPS6148771B2 (en
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10345479A priority Critical patent/JPS5627929A/en
Publication of JPS5627929A publication Critical patent/JPS5627929A/en
Publication of JPS6148771B2 publication Critical patent/JPS6148771B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To attempt the enlargement of effective area of a semiconductor chip when a pattern is drawn directly by the electron beam projection on a positive photo resist layer of the semiconductor substrate by a method wherein after the pattern is drawn, the positive photo resist covering the positioning mark of chip is irradiated with a strong electron beam. CONSTITUTION:A concave part is provided in a chip region of a silicon IC substrate 5 to form a positioning mark 1, an SiO2 film 4 is formed on the surface and a positive photo resist layer 6 is adhered on it and the substrate is put in an electron beam projector. At first a positive mark 1 is scanned by an electron beam 7 to perform positioning, and a pattern 8 of an electrode contact opening is drawn. In succession the part of the positive photo resist near the positioning mark 1 is made to be projected strongly by a low speed scanning beam to convert it into a negative photo resist layer 10. By this way, the part of positioning mark does not deform when the etching to form the opening for the contact part 11 is performed, and as the same mark can be used for the positioning in the next process, the enlargement of effective area of chip can be attempted.
JP10345479A 1979-08-14 1979-08-14 Electron beam projection Granted JPS5627929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10345479A JPS5627929A (en) 1979-08-14 1979-08-14 Electron beam projection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10345479A JPS5627929A (en) 1979-08-14 1979-08-14 Electron beam projection

Publications (2)

Publication Number Publication Date
JPS5627929A true JPS5627929A (en) 1981-03-18
JPS6148771B2 JPS6148771B2 (en) 1986-10-25

Family

ID=14354464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10345479A Granted JPS5627929A (en) 1979-08-14 1979-08-14 Electron beam projection

Country Status (1)

Country Link
JP (1) JPS5627929A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793133U (en) * 1980-11-28 1982-06-08
JPS6066428A (en) * 1983-09-21 1985-04-16 Fujitsu Ltd Electron beam exposing method
JPS61168916A (en) * 1985-01-22 1986-07-30 Fujitsu Ltd Manufacture of semiconductor device
JPH04101411A (en) * 1990-08-20 1992-04-02 Matsushita Electric Ind Co Ltd Method of aligning electron-beam direct writing

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223404A (en) * 1999-02-02 2000-08-11 Nikon Corp Method for detecting mark for alignment in charged particle beam exposure system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793133U (en) * 1980-11-28 1982-06-08
JPS6066428A (en) * 1983-09-21 1985-04-16 Fujitsu Ltd Electron beam exposing method
JPS61168916A (en) * 1985-01-22 1986-07-30 Fujitsu Ltd Manufacture of semiconductor device
JPH04101411A (en) * 1990-08-20 1992-04-02 Matsushita Electric Ind Co Ltd Method of aligning electron-beam direct writing

Also Published As

Publication number Publication date
JPS6148771B2 (en) 1986-10-25

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