JPS5595372A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5595372A JPS5595372A JP317279A JP317279A JPS5595372A JP S5595372 A JPS5595372 A JP S5595372A JP 317279 A JP317279 A JP 317279A JP 317279 A JP317279 A JP 317279A JP S5595372 A JPS5595372 A JP S5595372A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- covered
- etching
- steps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To simplify the formation of steps by a method wherein, when the active layer of a FET is processed into a step form, it is coated with a photosensitive resin and covered with a nontransparent film of a specified pattern, and then it is exposed to two steps of ultraviolet-ray irradiation, in the diagonal and perpendicular directions.
CONSTITUTION: An n-type GaAs active layer 2a is epitaxially grown on insulating substrate 1 and this is covered with photosensitive resin film 8. On top of this, nontransparent film 11, made of gelatin film, metal film, metal oxide film, etc. and having a fixed pattern and thickness, is provided. Next, the entire surface is covered with glass mask 12. By irradiating ultraviolet-rays on the surface of this from a diagonal direction, at specified angle θ with respect to the normal, film 8 is exposed. Subsequently, mask 12 is removed, film 8 is developed, and etching mask 8a, which is longer by d than film 11, retained by exposure. By operating etching by using this as a mask, the exposed part of layer 2a is made thin. Next, mask 12 is mounted again. This time, by irradiating ultraviolet-rays from the normal direction, mask 8a is converted into short 8b. Then mask 12 is removed, and by etching, two steps are produced for substrate 1 and layer 2a.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP317279A JPS5595372A (en) | 1979-01-12 | 1979-01-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP317279A JPS5595372A (en) | 1979-01-12 | 1979-01-12 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5595372A true JPS5595372A (en) | 1980-07-19 |
Family
ID=11549953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP317279A Pending JPS5595372A (en) | 1979-01-12 | 1979-01-12 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5595372A (en) |
-
1979
- 1979-01-12 JP JP317279A patent/JPS5595372A/en active Pending
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