JPS5595372A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5595372A
JPS5595372A JP317279A JP317279A JPS5595372A JP S5595372 A JPS5595372 A JP S5595372A JP 317279 A JP317279 A JP 317279A JP 317279 A JP317279 A JP 317279A JP S5595372 A JPS5595372 A JP S5595372A
Authority
JP
Japan
Prior art keywords
film
mask
covered
etching
steps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP317279A
Other languages
Japanese (ja)
Inventor
Aiichiro Nara
Takuji Shimanoe
Masao Sumiyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP317279A priority Critical patent/JPS5595372A/en
Publication of JPS5595372A publication Critical patent/JPS5595372A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To simplify the formation of steps by a method wherein, when the active layer of a FET is processed into a step form, it is coated with a photosensitive resin and covered with a nontransparent film of a specified pattern, and then it is exposed to two steps of ultraviolet-ray irradiation, in the diagonal and perpendicular directions.
CONSTITUTION: An n-type GaAs active layer 2a is epitaxially grown on insulating substrate 1 and this is covered with photosensitive resin film 8. On top of this, nontransparent film 11, made of gelatin film, metal film, metal oxide film, etc. and having a fixed pattern and thickness, is provided. Next, the entire surface is covered with glass mask 12. By irradiating ultraviolet-rays on the surface of this from a diagonal direction, at specified angle θ with respect to the normal, film 8 is exposed. Subsequently, mask 12 is removed, film 8 is developed, and etching mask 8a, which is longer by d than film 11, retained by exposure. By operating etching by using this as a mask, the exposed part of layer 2a is made thin. Next, mask 12 is mounted again. This time, by irradiating ultraviolet-rays from the normal direction, mask 8a is converted into short 8b. Then mask 12 is removed, and by etching, two steps are produced for substrate 1 and layer 2a.
COPYRIGHT: (C)1980,JPO&Japio
JP317279A 1979-01-12 1979-01-12 Manufacture of semiconductor device Pending JPS5595372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP317279A JPS5595372A (en) 1979-01-12 1979-01-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP317279A JPS5595372A (en) 1979-01-12 1979-01-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5595372A true JPS5595372A (en) 1980-07-19

Family

ID=11549953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP317279A Pending JPS5595372A (en) 1979-01-12 1979-01-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5595372A (en)

Similar Documents

Publication Publication Date Title
JPS57204133A (en) Manufacture of semiconductor integrated circuit
JPS57130430A (en) Pattern formation
JPS56144577A (en) Production of semiconductor device
JPS5669835A (en) Method for forming thin film pattern
JPS5595372A (en) Manufacture of semiconductor device
JPS5629326A (en) Manufacture of semiconductor device
JPS57183030A (en) Manufacture of semiconductor device
JPS5627929A (en) Electron beam projection
JPS6424425A (en) Formation of tapered pattern
JPS54104783A (en) Manufacture for mos type semiconductor device
JPS5339060A (en) Lot number marking method to wafers
JPS5515263A (en) Mos type semiconductor device
JPS5596681A (en) Method of fabricating semiconductor device
JPS5545196A (en) Fabricating method for thin-film magnetic head
JPS5633826A (en) Manufacture of target
JPS54146970A (en) Production of semiconductor device
JPS5527662A (en) Method of manufacturing semiconductor device
JPS54162484A (en) Manufacture of semiconductor device
JPS55158635A (en) Mask
JPS57124443A (en) Forming method for electrode layer
JPS55111139A (en) Forming method of thin film for fine pattern
JPS5568634A (en) Manufacture of mask for x-ray exposure
JPS57153435A (en) Manufacture of semiconductor device
JPS6450560A (en) Manufacture of semiconductor device
JPS5743431A (en) Manufacture of semiconductor device