JPS5626462A - Resistor and the manufacturing process - Google Patents

Resistor and the manufacturing process

Info

Publication number
JPS5626462A
JPS5626462A JP10226079A JP10226079A JPS5626462A JP S5626462 A JPS5626462 A JP S5626462A JP 10226079 A JP10226079 A JP 10226079A JP 10226079 A JP10226079 A JP 10226079A JP S5626462 A JPS5626462 A JP S5626462A
Authority
JP
Japan
Prior art keywords
layer
boron
resistor
amorphous
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10226079A
Other languages
Japanese (ja)
Inventor
Yoshihito Amamiya
Takayuki Sugata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10226079A priority Critical patent/JPS5626462A/en
Publication of JPS5626462A publication Critical patent/JPS5626462A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Adjustable Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To faciliate preparation of high resistance, by composing a resistor of an amorphous Si, adding such an impurity is boron and phosphorous, etc. so that resistance rate's temperature variation rate becomes positive in surrounding portion and negative in center portion, and that the impurity concentration becomes high in the surrounding portion and low in the inside portion. CONSTITUTION:An amorphous Si layer 12, in which boron, etc. is added with the impurity concentration of less than 10<13>/cm<3>, is piled on an insulation substrate 11 such as SiO2, and an Si3N4 layer 12 and an SiO2 layer 14 are laminated and attached onto the layer 12. And then, by forming these layers into prescribed shapes using photomask process and executing side etching only for the layer 13, surrounding area of the layer 12 under the layer 13 is exposed. And then, the layer 14 is removed, boron iron is injected only into the surrounding area of the layer 12 using remaining layer 13 as a mask. It is possible, by doing so, to obtain a high resistor having a small resistance value's temperature variation rate as a whole.
JP10226079A 1979-08-13 1979-08-13 Resistor and the manufacturing process Pending JPS5626462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10226079A JPS5626462A (en) 1979-08-13 1979-08-13 Resistor and the manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10226079A JPS5626462A (en) 1979-08-13 1979-08-13 Resistor and the manufacturing process

Publications (1)

Publication Number Publication Date
JPS5626462A true JPS5626462A (en) 1981-03-14

Family

ID=14322616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10226079A Pending JPS5626462A (en) 1979-08-13 1979-08-13 Resistor and the manufacturing process

Country Status (1)

Country Link
JP (1) JPS5626462A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5869709A (en) * 1981-10-08 1983-04-26 デグ−サ・アクチエンゲゼルシヤフト Method and apparatus for activating and reactivating particularly active carbon for carrying out gas/solid reaction
JPS58139913A (en) * 1982-02-01 1983-08-19 Ajikan:Kk Fluid layer move control method in vibrating fluid layer device
JPS59216624A (en) * 1983-05-24 1984-12-06 アラステア・エイチ・マツケルヴイ− Reactor
JP2020150090A (en) * 2019-03-13 2020-09-17 エイブリック株式会社 Semiconductor device and manufacturing method therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013439A (en) * 1973-04-23 1975-02-12
JPS50134387A (en) * 1974-04-10 1975-10-24
JPS50134781A (en) * 1974-04-15 1975-10-25

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013439A (en) * 1973-04-23 1975-02-12
JPS50134387A (en) * 1974-04-10 1975-10-24
JPS50134781A (en) * 1974-04-15 1975-10-25

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5869709A (en) * 1981-10-08 1983-04-26 デグ−サ・アクチエンゲゼルシヤフト Method and apparatus for activating and reactivating particularly active carbon for carrying out gas/solid reaction
JPS6320763B2 (en) * 1981-10-08 1988-04-30 Degussa
JPS58139913A (en) * 1982-02-01 1983-08-19 Ajikan:Kk Fluid layer move control method in vibrating fluid layer device
JPS59216624A (en) * 1983-05-24 1984-12-06 アラステア・エイチ・マツケルヴイ− Reactor
JPH0453578B2 (en) * 1983-05-24 1992-08-27 Eichi Matsukeruii Arasutea
JP2020150090A (en) * 2019-03-13 2020-09-17 エイブリック株式会社 Semiconductor device and manufacturing method therefor

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