JPS5624978A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5624978A
JPS5624978A JP10144479A JP10144479A JPS5624978A JP S5624978 A JPS5624978 A JP S5624978A JP 10144479 A JP10144479 A JP 10144479A JP 10144479 A JP10144479 A JP 10144479A JP S5624978 A JPS5624978 A JP S5624978A
Authority
JP
Japan
Prior art keywords
insulating film
film
coated
impurity
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10144479A
Other languages
Japanese (ja)
Inventor
Manzo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10144479A priority Critical patent/JPS5624978A/en
Publication of JPS5624978A publication Critical patent/JPS5624978A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a microscopic electrostatic induction type FET in high reproducibility by forming the second insulating film around the first insulating film on a main surface of a semiconductor substrate, removing the second insulating film at a predetermined portion and introducing impurity thereinto. CONSTITUTION:The first insulating film 23 is formed on the epitaxial layer 22 of a semiconductor substrate 21. Oepnings 23a, 23b are perforated thereat, and alcohol solution of organic oxysilane is coated therethrough. The thin film 24 on the insulating film 23 is etched, and a thick insulating film 24 is retained within the openings. A resist mask 25 is coated thereon, the film 24a is etched, and the mask is then removed. The film 23 is not almost removed owing to the etching speed difference between the films 23 and 24, and the opening 24a is substantially retained. Then, impurity injection layer 26 is formed, the film 26b is removed, organic oxysilane is coated again thereon, is treated similarly to the previous treatment to form an impurity layer 29 thereon, and electrodes are selectively mounted to complete it. In this configuration, the opening distance of the layers 26 and 29 is made independent of the relative positioning accuracy to thus form a microscopic device in high reproducibility.
JP10144479A 1979-08-08 1979-08-08 Manufacture of semiconductor device Pending JPS5624978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10144479A JPS5624978A (en) 1979-08-08 1979-08-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10144479A JPS5624978A (en) 1979-08-08 1979-08-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5624978A true JPS5624978A (en) 1981-03-10

Family

ID=14300852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10144479A Pending JPS5624978A (en) 1979-08-08 1979-08-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5624978A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117678A (en) * 1974-08-05 1976-02-12 Tokyo Shibaura Electric Co DENKAI KOKATORAN JISUTA
JPS51117580A (en) * 1975-04-09 1976-10-15 Toshiba Corp Field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117678A (en) * 1974-08-05 1976-02-12 Tokyo Shibaura Electric Co DENKAI KOKATORAN JISUTA
JPS51117580A (en) * 1975-04-09 1976-10-15 Toshiba Corp Field effect transistor

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