JPS5619587A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS5619587A
JPS5619587A JP9574079A JP9574079A JPS5619587A JP S5619587 A JPS5619587 A JP S5619587A JP 9574079 A JP9574079 A JP 9574079A JP 9574079 A JP9574079 A JP 9574079A JP S5619587 A JPS5619587 A JP S5619587A
Authority
JP
Japan
Prior art keywords
equipotential
data bus
sense amplifier
line
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9574079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6223392B2 (enrdf_load_stackoverflow
Inventor
Kazuo Tokushige
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9574079A priority Critical patent/JPS5619587A/ja
Publication of JPS5619587A publication Critical patent/JPS5619587A/ja
Publication of JPS6223392B2 publication Critical patent/JPS6223392B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP9574079A 1979-07-27 1979-07-27 Memory circuit Granted JPS5619587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9574079A JPS5619587A (en) 1979-07-27 1979-07-27 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9574079A JPS5619587A (en) 1979-07-27 1979-07-27 Memory circuit

Publications (2)

Publication Number Publication Date
JPS5619587A true JPS5619587A (en) 1981-02-24
JPS6223392B2 JPS6223392B2 (enrdf_load_stackoverflow) 1987-05-22

Family

ID=14145878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9574079A Granted JPS5619587A (en) 1979-07-27 1979-07-27 Memory circuit

Country Status (1)

Country Link
JP (1) JPS5619587A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5774884A (en) * 1980-06-30 1982-05-11 Inmos Corp Static ram
JPS5812193A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 半導体メモリ
JPS58146088A (ja) * 1982-02-22 1983-08-31 Nec Corp メモリ回路
JPS593783A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体記憶装置
JPS59110091A (ja) * 1982-12-14 1984-06-25 Nec Corp 出力回路
JPS59154692A (ja) * 1983-02-23 1984-09-03 Toshiba Corp 半導体記憶装置
JPS59178685A (ja) * 1983-03-30 1984-10-09 Toshiba Corp 半導体記憶回路
JPS60154393A (ja) * 1984-01-24 1985-08-14 Seiko Epson Corp 半導体記憶装置
JPS60251590A (ja) * 1984-05-25 1985-12-12 Toshiba Corp 半導体メモリ
JPS60253093A (ja) * 1984-05-30 1985-12-13 Fujitsu Ltd 半導体記憶装置
JPS62192090A (ja) * 1986-02-18 1987-08-22 Nec Corp 半導体記憶装置
JPS6378394A (ja) * 1986-09-19 1988-04-08 Fujitsu Ltd プリチヤ−ジクロツク発生回路
JPS6387692A (ja) * 1987-03-20 1988-04-18 Toshiba Corp 半導体メモリ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152931A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152931A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Semiconductor memory device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5774884A (en) * 1980-06-30 1982-05-11 Inmos Corp Static ram
EP0043245A3 (en) * 1980-06-30 1982-08-04 Inmos Corporation Asynchronously equilibrated and pre-charged static ram
JPS5812193A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 半導体メモリ
JPS58146088A (ja) * 1982-02-22 1983-08-31 Nec Corp メモリ回路
JPS593783A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体記憶装置
JPS59110091A (ja) * 1982-12-14 1984-06-25 Nec Corp 出力回路
JPS59154692A (ja) * 1983-02-23 1984-09-03 Toshiba Corp 半導体記憶装置
JPS59178685A (ja) * 1983-03-30 1984-10-09 Toshiba Corp 半導体記憶回路
JPS60154393A (ja) * 1984-01-24 1985-08-14 Seiko Epson Corp 半導体記憶装置
JPS60251590A (ja) * 1984-05-25 1985-12-12 Toshiba Corp 半導体メモリ
JPS60253093A (ja) * 1984-05-30 1985-12-13 Fujitsu Ltd 半導体記憶装置
JPS62192090A (ja) * 1986-02-18 1987-08-22 Nec Corp 半導体記憶装置
JPS6378394A (ja) * 1986-09-19 1988-04-08 Fujitsu Ltd プリチヤ−ジクロツク発生回路
JPS6387692A (ja) * 1987-03-20 1988-04-18 Toshiba Corp 半導体メモリ

Also Published As

Publication number Publication date
JPS6223392B2 (enrdf_load_stackoverflow) 1987-05-22

Similar Documents

Publication Publication Date Title
JPS5619587A (en) Memory circuit
JPS57127989A (en) Mos static type ram
GB1534336A (en) Semiconductor read only memories
GB1438861A (en) Memory circuits
US5307322A (en) Memory cell for use in a multi-port RAM
KR880013070A (ko) 디지탈 신호처리장치
JPS56166551A (en) Operation control
KR900008523A (ko) 반도체 메모리 소자
JPS55101185A (en) Semiconductor memory device
JPS5694585A (en) Memory transistor circuit
KR850008238A (ko) 반도체 기억장치
JPS5587381A (en) 1-transistor type mis memory
GB1182296A (en) Electronic Memory.
JPS55132582A (en) High speed semiconductor memory unit
JPS578980A (en) Memory device
JPS5538683A (en) Mass-storage static shift register
JPS54148339A (en) Memory device
JPS54107227A (en) Semiconductor memory
JPS5760589A (en) Memory circuit
JPS5737795A (en) Read-only memory element
JPS55111174A (en) Nonvolatile semiconductor memory device
JPS55157177A (en) Semiconductor memory device
JPS56107385A (en) Memory device
JPS5693174A (en) Mos random access memory
GB1077028A (en) Addressing system for computer memories