JPS5619587A - Memory circuit - Google Patents
Memory circuitInfo
- Publication number
- JPS5619587A JPS5619587A JP9574079A JP9574079A JPS5619587A JP S5619587 A JPS5619587 A JP S5619587A JP 9574079 A JP9574079 A JP 9574079A JP 9574079 A JP9574079 A JP 9574079A JP S5619587 A JPS5619587 A JP S5619587A
- Authority
- JP
- Japan
- Prior art keywords
- equipotential
- data bus
- sense amplifier
- line
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Abstract
PURPOSE:To reduce the access time in the static memory circuit, by detecting the change in the address signal and making equipotential the output of the digit line, data bus line and sense amplifier. CONSTITUTION:The control signal EQ is formed by catching the change in the access signal to produce the one shot signal. This control signal is fed to the gate of the equipotential transistor TRQ11, Q21 of digit line, data bus equipotential TRQ31, and sense amplifier equipotential TR41. Further, after the respective node is made for equipotential, the word line is toward the potential to select the potential of the memory cell. Thus, at the selection of memory cell, since the output of the digit line, data bus line and sense amplifier are respectively at the equipotential already, the time for the same potential can be omitted to quicken the access time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9574079A JPS5619587A (en) | 1979-07-27 | 1979-07-27 | Memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9574079A JPS5619587A (en) | 1979-07-27 | 1979-07-27 | Memory circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5619587A true JPS5619587A (en) | 1981-02-24 |
JPS6223392B2 JPS6223392B2 (en) | 1987-05-22 |
Family
ID=14145878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9574079A Granted JPS5619587A (en) | 1979-07-27 | 1979-07-27 | Memory circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5619587A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0043245A2 (en) * | 1980-06-30 | 1982-01-06 | Inmos Corporation | Asynchronously equilibrated and pre-charged static RAM |
JPS5812193A (en) * | 1981-07-15 | 1983-01-24 | Toshiba Corp | Semiconductor memory |
JPS58146088A (en) * | 1982-02-22 | 1983-08-31 | Nec Corp | Memory circuit |
JPS593783A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Semiconductor storage device |
JPS59110091A (en) * | 1982-12-14 | 1984-06-25 | Nec Corp | Output circuit |
JPS59154692A (en) * | 1983-02-23 | 1984-09-03 | Toshiba Corp | Semiconductor storage device |
JPS59178685A (en) * | 1983-03-30 | 1984-10-09 | Toshiba Corp | Semiconductor storage circuit |
JPS60154393A (en) * | 1984-01-24 | 1985-08-14 | Seiko Epson Corp | Semiconductor storage |
JPS60251590A (en) * | 1984-05-25 | 1985-12-12 | Toshiba Corp | Semiconductor memory |
JPS60253093A (en) * | 1984-05-30 | 1985-12-13 | Fujitsu Ltd | Semiconductor storage device |
JPS62192090A (en) * | 1986-02-18 | 1987-08-22 | Nec Corp | Semiconductor storage device |
JPS6378394A (en) * | 1986-09-19 | 1988-04-08 | Fujitsu Ltd | Precharge clock generating circuit |
JPS6387692A (en) * | 1987-03-20 | 1988-04-18 | Toshiba Corp | Semiconductor memory |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152931A (en) * | 1978-05-24 | 1979-12-01 | Hitachi Ltd | Semiconductor memory device |
-
1979
- 1979-07-27 JP JP9574079A patent/JPS5619587A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152931A (en) * | 1978-05-24 | 1979-12-01 | Hitachi Ltd | Semiconductor memory device |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5774884A (en) * | 1980-06-30 | 1982-05-11 | Inmos Corp | Static ram |
EP0043245A3 (en) * | 1980-06-30 | 1982-08-04 | Inmos Corporation | Asynchronously equilibrated and pre-charged static ram |
EP0043245A2 (en) * | 1980-06-30 | 1982-01-06 | Inmos Corporation | Asynchronously equilibrated and pre-charged static RAM |
JPS631677B2 (en) * | 1980-06-30 | 1988-01-13 | Inmos Corp | |
JPS5812193A (en) * | 1981-07-15 | 1983-01-24 | Toshiba Corp | Semiconductor memory |
JPH0217874B2 (en) * | 1981-07-15 | 1990-04-23 | Tokyo Shibaura Electric Co | |
JPS6224875B2 (en) * | 1982-02-22 | 1987-05-30 | Nippon Electric Co | |
JPS58146088A (en) * | 1982-02-22 | 1983-08-31 | Nec Corp | Memory circuit |
JPS593783A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Semiconductor storage device |
JPS6310517B2 (en) * | 1982-06-30 | 1988-03-07 | Fujitsu Ltd | |
JPS59110091A (en) * | 1982-12-14 | 1984-06-25 | Nec Corp | Output circuit |
JPS59154692A (en) * | 1983-02-23 | 1984-09-03 | Toshiba Corp | Semiconductor storage device |
JPS59178685A (en) * | 1983-03-30 | 1984-10-09 | Toshiba Corp | Semiconductor storage circuit |
JPH0544757B2 (en) * | 1984-01-24 | 1993-07-07 | Seiko Epson Corp | |
JPS60154393A (en) * | 1984-01-24 | 1985-08-14 | Seiko Epson Corp | Semiconductor storage |
JPS60251590A (en) * | 1984-05-25 | 1985-12-12 | Toshiba Corp | Semiconductor memory |
EP0166540A2 (en) * | 1984-05-30 | 1986-01-02 | Fujitsu Limited | A semiconductor memory device |
JPH0456399B2 (en) * | 1984-05-30 | 1992-09-08 | Fujitsu Ltd | |
JPS60253093A (en) * | 1984-05-30 | 1985-12-13 | Fujitsu Ltd | Semiconductor storage device |
JPS62192090A (en) * | 1986-02-18 | 1987-08-22 | Nec Corp | Semiconductor storage device |
JPS6378394A (en) * | 1986-09-19 | 1988-04-08 | Fujitsu Ltd | Precharge clock generating circuit |
JPS6387692A (en) * | 1987-03-20 | 1988-04-18 | Toshiba Corp | Semiconductor memory |
JPH034992B2 (en) * | 1987-03-20 | 1991-01-24 | Tokyo Shibaura Electric Co |
Also Published As
Publication number | Publication date |
---|---|
JPS6223392B2 (en) | 1987-05-22 |
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