JPS5619587A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS5619587A
JPS5619587A JP9574079A JP9574079A JPS5619587A JP S5619587 A JPS5619587 A JP S5619587A JP 9574079 A JP9574079 A JP 9574079A JP 9574079 A JP9574079 A JP 9574079A JP S5619587 A JPS5619587 A JP S5619587A
Authority
JP
Japan
Prior art keywords
equipotential
data bus
sense amplifier
line
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9574079A
Other languages
Japanese (ja)
Other versions
JPS6223392B2 (en
Inventor
Kazuo Tokushige
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9574079A priority Critical patent/JPS5619587A/en
Publication of JPS5619587A publication Critical patent/JPS5619587A/en
Publication of JPS6223392B2 publication Critical patent/JPS6223392B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To reduce the access time in the static memory circuit, by detecting the change in the address signal and making equipotential the output of the digit line, data bus line and sense amplifier. CONSTITUTION:The control signal EQ is formed by catching the change in the access signal to produce the one shot signal. This control signal is fed to the gate of the equipotential transistor TRQ11, Q21 of digit line, data bus equipotential TRQ31, and sense amplifier equipotential TR41. Further, after the respective node is made for equipotential, the word line is toward the potential to select the potential of the memory cell. Thus, at the selection of memory cell, since the output of the digit line, data bus line and sense amplifier are respectively at the equipotential already, the time for the same potential can be omitted to quicken the access time.
JP9574079A 1979-07-27 1979-07-27 Memory circuit Granted JPS5619587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9574079A JPS5619587A (en) 1979-07-27 1979-07-27 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9574079A JPS5619587A (en) 1979-07-27 1979-07-27 Memory circuit

Publications (2)

Publication Number Publication Date
JPS5619587A true JPS5619587A (en) 1981-02-24
JPS6223392B2 JPS6223392B2 (en) 1987-05-22

Family

ID=14145878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9574079A Granted JPS5619587A (en) 1979-07-27 1979-07-27 Memory circuit

Country Status (1)

Country Link
JP (1) JPS5619587A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0043245A2 (en) * 1980-06-30 1982-01-06 Inmos Corporation Asynchronously equilibrated and pre-charged static RAM
JPS5812193A (en) * 1981-07-15 1983-01-24 Toshiba Corp Semiconductor memory
JPS58146088A (en) * 1982-02-22 1983-08-31 Nec Corp Memory circuit
JPS593783A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor storage device
JPS59110091A (en) * 1982-12-14 1984-06-25 Nec Corp Output circuit
JPS59154692A (en) * 1983-02-23 1984-09-03 Toshiba Corp Semiconductor storage device
JPS59178685A (en) * 1983-03-30 1984-10-09 Toshiba Corp Semiconductor storage circuit
JPS60154393A (en) * 1984-01-24 1985-08-14 Seiko Epson Corp Semiconductor storage
JPS60251590A (en) * 1984-05-25 1985-12-12 Toshiba Corp Semiconductor memory
JPS60253093A (en) * 1984-05-30 1985-12-13 Fujitsu Ltd Semiconductor storage device
JPS62192090A (en) * 1986-02-18 1987-08-22 Nec Corp Semiconductor storage device
JPS6378394A (en) * 1986-09-19 1988-04-08 Fujitsu Ltd Precharge clock generating circuit
JPS6387692A (en) * 1987-03-20 1988-04-18 Toshiba Corp Semiconductor memory

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152931A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152931A (en) * 1978-05-24 1979-12-01 Hitachi Ltd Semiconductor memory device

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5774884A (en) * 1980-06-30 1982-05-11 Inmos Corp Static ram
EP0043245A3 (en) * 1980-06-30 1982-08-04 Inmos Corporation Asynchronously equilibrated and pre-charged static ram
EP0043245A2 (en) * 1980-06-30 1982-01-06 Inmos Corporation Asynchronously equilibrated and pre-charged static RAM
JPS631677B2 (en) * 1980-06-30 1988-01-13 Inmos Corp
JPS5812193A (en) * 1981-07-15 1983-01-24 Toshiba Corp Semiconductor memory
JPH0217874B2 (en) * 1981-07-15 1990-04-23 Tokyo Shibaura Electric Co
JPS6224875B2 (en) * 1982-02-22 1987-05-30 Nippon Electric Co
JPS58146088A (en) * 1982-02-22 1983-08-31 Nec Corp Memory circuit
JPS593783A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor storage device
JPS6310517B2 (en) * 1982-06-30 1988-03-07 Fujitsu Ltd
JPS59110091A (en) * 1982-12-14 1984-06-25 Nec Corp Output circuit
JPS59154692A (en) * 1983-02-23 1984-09-03 Toshiba Corp Semiconductor storage device
JPS59178685A (en) * 1983-03-30 1984-10-09 Toshiba Corp Semiconductor storage circuit
JPH0544757B2 (en) * 1984-01-24 1993-07-07 Seiko Epson Corp
JPS60154393A (en) * 1984-01-24 1985-08-14 Seiko Epson Corp Semiconductor storage
JPS60251590A (en) * 1984-05-25 1985-12-12 Toshiba Corp Semiconductor memory
EP0166540A2 (en) * 1984-05-30 1986-01-02 Fujitsu Limited A semiconductor memory device
JPH0456399B2 (en) * 1984-05-30 1992-09-08 Fujitsu Ltd
JPS60253093A (en) * 1984-05-30 1985-12-13 Fujitsu Ltd Semiconductor storage device
JPS62192090A (en) * 1986-02-18 1987-08-22 Nec Corp Semiconductor storage device
JPS6378394A (en) * 1986-09-19 1988-04-08 Fujitsu Ltd Precharge clock generating circuit
JPS6387692A (en) * 1987-03-20 1988-04-18 Toshiba Corp Semiconductor memory
JPH034992B2 (en) * 1987-03-20 1991-01-24 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS6223392B2 (en) 1987-05-22

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