JPS56169359A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS56169359A JPS56169359A JP7351980A JP7351980A JPS56169359A JP S56169359 A JPS56169359 A JP S56169359A JP 7351980 A JP7351980 A JP 7351980A JP 7351980 A JP7351980 A JP 7351980A JP S56169359 A JPS56169359 A JP S56169359A
- Authority
- JP
- Japan
- Prior art keywords
- type
- mask
- integrated circuit
- steps
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7351980A JPS56169359A (en) | 1980-05-30 | 1980-05-30 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7351980A JPS56169359A (en) | 1980-05-30 | 1980-05-30 | Semiconductor integrated circuit device |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58226204A Division JPS59188162A (ja) | 1983-11-29 | 1983-11-29 | 半導体集積回路装置 |
JP8545890A Division JPH0316166A (ja) | 1990-03-31 | 1990-03-31 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56169359A true JPS56169359A (en) | 1981-12-26 |
JPH0427707B2 JPH0427707B2 (US06818201-20041116-C00086.png) | 1992-05-12 |
Family
ID=13520567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7351980A Granted JPS56169359A (en) | 1980-05-30 | 1980-05-30 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56169359A (US06818201-20041116-C00086.png) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57206063A (en) * | 1981-06-15 | 1982-12-17 | Toshiba Corp | Semiconductor substrate and manufacture therefor |
JPS57206064A (en) * | 1981-06-15 | 1982-12-17 | Toshiba Corp | Semiconductor device and manufacturing method therefor |
JPS58170048A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体装置 |
JPS58182863A (ja) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | 半導体装置 |
JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
JPS6080267A (ja) * | 1983-10-07 | 1985-05-08 | Toshiba Corp | 半導体集積回路装置の製造方法 |
JPS6097661A (ja) * | 1983-11-02 | 1985-05-31 | Hitachi Ltd | 半導体集積回路装置 |
JPS60101963A (ja) * | 1983-11-08 | 1985-06-06 | Iwatsu Electric Co Ltd | 相補型電界効果トランジスタの製造方法 |
JPS60218866A (ja) * | 1984-04-13 | 1985-11-01 | Mitsubishi Electric Corp | 相補型mos半導体装置 |
JPS6325964A (ja) * | 1987-02-13 | 1988-02-03 | Seiko Epson Corp | C−mos型半導体集積回路装置 |
JPS63278265A (ja) * | 1986-11-04 | 1988-11-15 | サムスン エレクトロニクス カンパニー リミテッド | 半導体BiCMOS装置の製造方法 |
JPS63301545A (ja) * | 1987-05-30 | 1988-12-08 | Ricoh Co Ltd | 半導体集積回路装置の製造方法 |
-
1980
- 1980-05-30 JP JP7351980A patent/JPS56169359A/ja active Granted
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57206064A (en) * | 1981-06-15 | 1982-12-17 | Toshiba Corp | Semiconductor device and manufacturing method therefor |
JPS57206063A (en) * | 1981-06-15 | 1982-12-17 | Toshiba Corp | Semiconductor substrate and manufacture therefor |
JPS58170048A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体装置 |
JPS58182863A (ja) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | 半導体装置 |
JPH0481341B2 (US06818201-20041116-C00086.png) * | 1982-04-21 | 1992-12-22 | Hitachi Ltd | |
JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
JPH0315346B2 (US06818201-20041116-C00086.png) * | 1983-10-07 | 1991-02-28 | Tokyo Shibaura Electric Co | |
JPS6080267A (ja) * | 1983-10-07 | 1985-05-08 | Toshiba Corp | 半導体集積回路装置の製造方法 |
JPS6097661A (ja) * | 1983-11-02 | 1985-05-31 | Hitachi Ltd | 半導体集積回路装置 |
JPS60101963A (ja) * | 1983-11-08 | 1985-06-06 | Iwatsu Electric Co Ltd | 相補型電界効果トランジスタの製造方法 |
JPS60218866A (ja) * | 1984-04-13 | 1985-11-01 | Mitsubishi Electric Corp | 相補型mos半導体装置 |
JPS63278265A (ja) * | 1986-11-04 | 1988-11-15 | サムスン エレクトロニクス カンパニー リミテッド | 半導体BiCMOS装置の製造方法 |
JPS6325964A (ja) * | 1987-02-13 | 1988-02-03 | Seiko Epson Corp | C−mos型半導体集積回路装置 |
JPS63301545A (ja) * | 1987-05-30 | 1988-12-08 | Ricoh Co Ltd | 半導体集積回路装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0427707B2 (US06818201-20041116-C00086.png) | 1992-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5546504A (en) | Semiconductor device | |
JPS56169359A (en) | Semiconductor integrated circuit device | |
JPS5493981A (en) | Semiconductor device | |
EP0178991A2 (en) | A complementary semiconductor device having high switching speed and latchup-free capability | |
JPS6453574A (en) | Semiconductor device | |
JPS5650535A (en) | Manufacture of semiconductor device | |
JPS6484659A (en) | Manufacture of semiconductor device | |
JPS56111264A (en) | Manufacture of semiconductor device | |
JPS5768075A (en) | Manufacture of integrated circuit device | |
JPS572519A (en) | Manufacture of semiconductor device | |
JPS57118663A (en) | Manufacture of semiconductor integrated circuit device | |
JPS55102251A (en) | Mos integrated circuit device | |
GB1470804A (en) | Method for fabrucating semiconductor devices utilizing compo site masking | |
JPS5541730A (en) | Semiconductor device | |
JPS5479575A (en) | Semiconductor integrated-circuit device | |
JPS5513944A (en) | C-mos semiconductor device | |
GB1318976A (en) | Semi-conductor devices | |
JPS5773964A (en) | Semiconductor integrated circuit device | |
JPS568849A (en) | Manufacture of semiconductor integrated circuit | |
JPS57147267A (en) | Manufacture of semiconductor integrated circuit device | |
JPS5598844A (en) | Semiconductor integrated circuit | |
JPS57100767A (en) | Mos type semiconductor device | |
JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
JPS5492180A (en) | Manufacture of semiconductor device | |
JPS5635436A (en) | Semiconductor device |