JPS56169320A - Silicon carbide semiconductor - Google Patents

Silicon carbide semiconductor

Info

Publication number
JPS56169320A
JPS56169320A JP5560681A JP5560681A JPS56169320A JP S56169320 A JPS56169320 A JP S56169320A JP 5560681 A JP5560681 A JP 5560681A JP 5560681 A JP5560681 A JP 5560681A JP S56169320 A JPS56169320 A JP S56169320A
Authority
JP
Japan
Prior art keywords
gas
vessel
lead
type
port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5560681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6236632B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP5560681A priority Critical patent/JPS56169320A/ja
Publication of JPS56169320A publication Critical patent/JPS56169320A/ja
Publication of JPS6236632B2 publication Critical patent/JPS6236632B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP5560681A 1981-04-15 1981-04-15 Silicon carbide semiconductor Granted JPS56169320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5560681A JPS56169320A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5560681A JPS56169320A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15288778A Division JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56169320A true JPS56169320A (en) 1981-12-26
JPS6236632B2 JPS6236632B2 (enrdf_load_stackoverflow) 1987-08-07

Family

ID=13003422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5560681A Granted JPS56169320A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor

Country Status (1)

Country Link
JP (1) JPS56169320A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115872A (ja) * 1981-12-28 1983-07-09 Kanegafuchi Chem Ind Co Ltd 可撓性光起電力装置
JP2004297008A (ja) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology ｐ型半導体材料、その作製方法、その作製装置、光電変換素子、発光素子、および薄膜トランジスタ
JP2005268481A (ja) * 2004-03-18 2005-09-29 Toppan Printing Co Ltd 非単結晶太陽電池およびｐ型半導体材料を作製する作製装置
US10176958B2 (en) 2012-05-07 2019-01-08 Tanaka Kikinzoku Kogyo K.K. Electrode material for thermal-fuse movable electrode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833150A (enrdf_load_stackoverflow) * 1971-08-28 1973-05-08
JPS4942423A (enrdf_load_stackoverflow) * 1972-05-04 1974-04-22
JPS531465A (en) * 1976-06-25 1978-01-09 Matsushita Electric Ind Co Ltd Manufacturer for semiconductor mono crystal thin film and its manufacturing unit
JPS54153740A (en) * 1978-05-25 1979-12-04 Ulvac Corp Continuous vacuum treatment apparatus
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833150A (enrdf_load_stackoverflow) * 1971-08-28 1973-05-08
JPS4942423A (enrdf_load_stackoverflow) * 1972-05-04 1974-04-22
JPS531465A (en) * 1976-06-25 1978-01-09 Matsushita Electric Ind Co Ltd Manufacturer for semiconductor mono crystal thin film and its manufacturing unit
JPS54153740A (en) * 1978-05-25 1979-12-04 Ulvac Corp Continuous vacuum treatment apparatus
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115872A (ja) * 1981-12-28 1983-07-09 Kanegafuchi Chem Ind Co Ltd 可撓性光起電力装置
JP2004297008A (ja) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology ｐ型半導体材料、その作製方法、その作製装置、光電変換素子、発光素子、および薄膜トランジスタ
JP2005268481A (ja) * 2004-03-18 2005-09-29 Toppan Printing Co Ltd 非単結晶太陽電池およびｐ型半導体材料を作製する作製装置
US10176958B2 (en) 2012-05-07 2019-01-08 Tanaka Kikinzoku Kogyo K.K. Electrode material for thermal-fuse movable electrode

Also Published As

Publication number Publication date
JPS6236632B2 (enrdf_load_stackoverflow) 1987-08-07

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