JPS56162834A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56162834A
JPS56162834A JP6609280A JP6609280A JPS56162834A JP S56162834 A JPS56162834 A JP S56162834A JP 6609280 A JP6609280 A JP 6609280A JP 6609280 A JP6609280 A JP 6609280A JP S56162834 A JPS56162834 A JP S56162834A
Authority
JP
Japan
Prior art keywords
segment
width
wafer
pattern
minimum width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6609280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS639656B2 (enrdf_load_stackoverflow
Inventor
Yasuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6609280A priority Critical patent/JPS56162834A/ja
Publication of JPS56162834A publication Critical patent/JPS56162834A/ja
Publication of JPS639656B2 publication Critical patent/JPS639656B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP6609280A 1980-05-19 1980-05-19 Semiconductor device Granted JPS56162834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6609280A JPS56162834A (en) 1980-05-19 1980-05-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6609280A JPS56162834A (en) 1980-05-19 1980-05-19 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56162834A true JPS56162834A (en) 1981-12-15
JPS639656B2 JPS639656B2 (enrdf_load_stackoverflow) 1988-03-01

Family

ID=13305870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6609280A Granted JPS56162834A (en) 1980-05-19 1980-05-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56162834A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020091632A (ko) * 2001-05-31 2002-12-06 엘지.필립스 엘시디 주식회사 슬릿형 포토 마스크

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02146652A (ja) * 1988-11-29 1990-06-05 Yokogawa Electric Corp Ｉ／ｏマルチプレクサ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020091632A (ko) * 2001-05-31 2002-12-06 엘지.필립스 엘시디 주식회사 슬릿형 포토 마스크

Also Published As

Publication number Publication date
JPS639656B2 (enrdf_load_stackoverflow) 1988-03-01

Similar Documents

Publication Publication Date Title
BE848345A (fr) Procede de fabrication d'un dispositif a semi-conducteurs,
JPS51120180A (en) Pattern printing device
JPS56162834A (en) Semiconductor device
JPS534472A (en) Semiconductor package
JPS52155985A (en) Semiconductor device
JPS5333053A (en) Production of semiconductor device
FR2331153A1 (fr) Procede de fabrication d'un dispositif semi-conducteur
JPS51149781A (en) Device for mounting semiconductor laserelement
FR2309978A1 (fr) Dispositif semi-conducteur perfectionne et procede de fabrication d'un tel dispositif
JPS51117588A (en) Manufacturing method of semiconductor equipment
BE855889A (fr) Procede de fabrication d'un dispositif semi-conducteur
JPS5687322A (en) Manufacture of semiconductor device
JPS647043A (en) Photomask
JPS5330874A (en) Semiconductor element mounting device
JPS52119187A (en) Manufacture of semiconductor
FR2334206A1 (fr) Procede perfectionne de fabrication d'un dispositif semi-conducteur
JPS5359370A (en) Positioning method
JPS5323572A (en) Electornic apparatus
JPS52103963A (en) Semiconductor device and its manufacturing method
JPS532081A (en) Manufacture of semiconductor device
JPS5340280A (en) Manufacture of semiconductor unit
JPS5369582A (en) Coating method for photo-resist
JPS51132085A (en) Manufacturing method of semiconductor device
JPS5766632A (en) Semiconductor integrated circuit device
JPS537392A (en) Operational processing method for #-ray count value