JPS52119187A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPS52119187A JPS52119187A JP3565276A JP3565276A JPS52119187A JP S52119187 A JPS52119187 A JP S52119187A JP 3565276 A JP3565276 A JP 3565276A JP 3565276 A JP3565276 A JP 3565276A JP S52119187 A JPS52119187 A JP S52119187A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- manufacture
- mask
- precision
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To obtain the column-type FET for the high frequency large electric power to increase the precision of the pattern by the use of only one sheet of mask for the photo etching in the self-matching system.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3565276A JPS5855668B2 (en) | 1976-03-31 | 1976-03-31 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3565276A JPS5855668B2 (en) | 1976-03-31 | 1976-03-31 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52119187A true JPS52119187A (en) | 1977-10-06 |
JPS5855668B2 JPS5855668B2 (en) | 1983-12-10 |
Family
ID=12447796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3565276A Expired JPS5855668B2 (en) | 1976-03-31 | 1976-03-31 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5855668B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5621377A (en) * | 1979-07-31 | 1981-02-27 | Tohoku Metal Ind Ltd | High-frequency high-power semiconductor device |
JPS5982772A (en) * | 1982-11-02 | 1984-05-12 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field effect transistor |
JPH06232419A (en) * | 1993-01-29 | 1994-08-19 | Shodenryoku Kosoku Tsushin Kenkyusho:Kk | Recessed gate type electrostatic induction transistor and its manufacture |
-
1976
- 1976-03-31 JP JP3565276A patent/JPS5855668B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5621377A (en) * | 1979-07-31 | 1981-02-27 | Tohoku Metal Ind Ltd | High-frequency high-power semiconductor device |
JPS5982772A (en) * | 1982-11-02 | 1984-05-12 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field effect transistor |
JPH06232419A (en) * | 1993-01-29 | 1994-08-19 | Shodenryoku Kosoku Tsushin Kenkyusho:Kk | Recessed gate type electrostatic induction transistor and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
JPS5855668B2 (en) | 1983-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52136590A (en) | Production of semiconductor device | |
JPS52119187A (en) | Manufacture of semiconductor | |
JPS5333053A (en) | Production of semiconductor device | |
JPS52119188A (en) | Manufacture of semiconductor | |
JPS52119189A (en) | Manufacture of semiconductor | |
JPS5210082A (en) | Semiconductor device | |
JPS5441665A (en) | Manufacture for semiconductor device | |
JPS51151073A (en) | Method to adjust the position of an mask for an integrated circuit | |
JPS52153669A (en) | Photo mask of semiconductor integrated circuit | |
JPS5419367A (en) | Production of semiconductor device | |
JPS53123083A (en) | Production of semiconductor device | |
JPS525270A (en) | Photo-mask | |
JPS5382173A (en) | Positioning method | |
JPS5286087A (en) | Manufacture of semiconductor device | |
JPS539488A (en) | Production of semiconductor device | |
JPS548971A (en) | Manufacture of semiconductor device | |
JPS5294070A (en) | Process for preparing semi-conductor | |
JPS5347281A (en) | Production of semiconductor device | |
JPS53121468A (en) | Manufacture for semiconductor device | |
JPS5424574A (en) | Manufacture for semiconductor device | |
JPS526470A (en) | Semiconductor integrated circuit | |
JPS535574A (en) | Manufacture of semiconductor device | |
JPS52153668A (en) | Photo mask of semiconductor integrated circuit | |
JPS51147268A (en) | Manufacturing process of depression type field effect semiconductor de vice by ion-implantation | |
JPS5336483A (en) | Manufacture of semiconductor device |