JPS52119187A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS52119187A
JPS52119187A JP3565276A JP3565276A JPS52119187A JP S52119187 A JPS52119187 A JP S52119187A JP 3565276 A JP3565276 A JP 3565276A JP 3565276 A JP3565276 A JP 3565276A JP S52119187 A JPS52119187 A JP S52119187A
Authority
JP
Japan
Prior art keywords
semiconductor
manufacture
mask
precision
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3565276A
Other languages
Japanese (ja)
Other versions
JPS5855668B2 (en
Inventor
Takashi Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3565276A priority Critical patent/JPS5855668B2/en
Publication of JPS52119187A publication Critical patent/JPS52119187A/en
Publication of JPS5855668B2 publication Critical patent/JPS5855668B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain the column-type FET for the high frequency large electric power to increase the precision of the pattern by the use of only one sheet of mask for the photo etching in the self-matching system.
COPYRIGHT: (C)1977,JPO&Japio
JP3565276A 1976-03-31 1976-03-31 Manufacturing method of semiconductor device Expired JPS5855668B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3565276A JPS5855668B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3565276A JPS5855668B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS52119187A true JPS52119187A (en) 1977-10-06
JPS5855668B2 JPS5855668B2 (en) 1983-12-10

Family

ID=12447796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3565276A Expired JPS5855668B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5855668B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5621377A (en) * 1979-07-31 1981-02-27 Tohoku Metal Ind Ltd High-frequency high-power semiconductor device
JPS5982772A (en) * 1982-11-02 1984-05-12 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field effect transistor
JPH06232419A (en) * 1993-01-29 1994-08-19 Shodenryoku Kosoku Tsushin Kenkyusho:Kk Recessed gate type electrostatic induction transistor and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5621377A (en) * 1979-07-31 1981-02-27 Tohoku Metal Ind Ltd High-frequency high-power semiconductor device
JPS5982772A (en) * 1982-11-02 1984-05-12 Nippon Telegr & Teleph Corp <Ntt> Manufacture of field effect transistor
JPH06232419A (en) * 1993-01-29 1994-08-19 Shodenryoku Kosoku Tsushin Kenkyusho:Kk Recessed gate type electrostatic induction transistor and its manufacture

Also Published As

Publication number Publication date
JPS5855668B2 (en) 1983-12-10

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