JPS52119188A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS52119188A
JPS52119188A JP3565576A JP3565576A JPS52119188A JP S52119188 A JPS52119188 A JP S52119188A JP 3565576 A JP3565576 A JP 3565576A JP 3565576 A JP3565576 A JP 3565576A JP S52119188 A JPS52119188 A JP S52119188A
Authority
JP
Japan
Prior art keywords
semiconductor
manufacture
considaration
slippage
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3565576A
Other languages
Japanese (ja)
Other versions
JPS5854512B2 (en
Inventor
Takashi Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3565576A priority Critical patent/JPS5854512B2/en
Publication of JPS52119188A publication Critical patent/JPS52119188A/en
Publication of JPS5854512B2 publication Critical patent/JPS5854512B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To obtain the column-type FET for the high frequency large electric power in the self-matching system without the considaration of the slippage by the use of only one sheet of mask for the photo etching.
COPYRIGHT: (C)1977,JPO&Japio
JP3565576A 1976-03-31 1976-03-31 Manufacturing method of semiconductor device Expired JPS5854512B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3565576A JPS5854512B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3565576A JPS5854512B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS52119188A true JPS52119188A (en) 1977-10-06
JPS5854512B2 JPS5854512B2 (en) 1983-12-05

Family

ID=12447881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3565576A Expired JPS5854512B2 (en) 1976-03-31 1976-03-31 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5854512B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232419A (en) * 1993-01-29 1994-08-19 Shodenryoku Kosoku Tsushin Kenkyusho:Kk Recessed gate type electrostatic induction transistor and its manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06137875A (en) * 1991-12-24 1994-05-20 Sumitomo Electric Ind Ltd On-vehicle optical fiber gyroscope

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232419A (en) * 1993-01-29 1994-08-19 Shodenryoku Kosoku Tsushin Kenkyusho:Kk Recessed gate type electrostatic induction transistor and its manufacture

Also Published As

Publication number Publication date
JPS5854512B2 (en) 1983-12-05

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