BE855889A - Procede de fabrication d'un dispositif semi-conducteur - Google Patents
Procede de fabrication d'un dispositif semi-conducteurInfo
- Publication number
- BE855889A BE855889A BE178599A BE178599A BE855889A BE 855889 A BE855889 A BE 855889A BE 178599 A BE178599 A BE 178599A BE 178599 A BE178599 A BE 178599A BE 855889 A BE855889 A BE 855889A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/698,480 US4099997A (en) | 1976-06-21 | 1976-06-21 | Method of fabricating a semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE855889A true BE855889A (fr) | 1977-10-17 |
Family
ID=24805431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE178599A BE855889A (fr) | 1976-06-21 | 1977-06-20 | Procede de fabrication d'un dispositif semi-conducteur |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4099997A (fr) |
| JP (1) | JPS52156578A (fr) |
| BE (1) | BE855889A (fr) |
| DE (1) | DE2726484A1 (fr) |
| FR (1) | FR2356272A1 (fr) |
| GB (1) | GB1575058A (fr) |
| IN (1) | IN146805B (fr) |
| IT (1) | IT1082080B (fr) |
| PL (1) | PL114729B1 (fr) |
| SE (1) | SE7706615L (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4199386A (en) * | 1978-11-28 | 1980-04-22 | Rca Corporation | Method of diffusing aluminum into monocrystalline silicon |
| JPS5824007B2 (ja) * | 1979-07-16 | 1983-05-18 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US4804634A (en) * | 1981-04-24 | 1989-02-14 | National Semiconductor Corporation | Integrated circuit lateral transistor structure |
| DE19908400A1 (de) * | 1999-02-26 | 2000-09-07 | Bosch Gmbh Robert | Verfahren zur Herstellung hochdotierter Halbleiterbauelemente |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3313012A (en) * | 1963-11-13 | 1967-04-11 | Texas Instruments Inc | Method for making a pnpn device by diffusing |
| GB1068392A (en) * | 1965-05-05 | 1967-05-10 | Lucas Industries Ltd | Semi-conductor devices |
| US3523042A (en) * | 1967-12-26 | 1970-08-04 | Hughes Aircraft Co | Method of making bipolar transistor devices |
| NL140657B (nl) * | 1968-06-21 | 1973-12-17 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting door een diffusiebehandeling en halfgeleiderinrichting, vervaardigd volgens deze werkwijze. |
| GB1199399A (en) * | 1968-06-21 | 1970-07-22 | Matsushita Electronics Corp | Improvements in or relating to the Manufacture of Semiconductors. |
| DE1811277C3 (de) * | 1968-11-27 | 1978-06-08 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht |
| US3748198A (en) * | 1970-01-22 | 1973-07-24 | Ibm | Simultaneous double diffusion into a semiconductor substrate |
| US3886569A (en) * | 1970-01-22 | 1975-05-27 | Ibm | Simultaneous double diffusion into a semiconductor substrate |
| FR2088067A1 (en) * | 1970-05-13 | 1972-01-07 | Tsitovsky Ilya | Semiconductor slice - with shaped p-n junctions |
| US3751314A (en) * | 1971-07-01 | 1973-08-07 | Bell Telephone Labor Inc | Silicon semiconductor device processing |
| DE2214224C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen |
| US3901735A (en) * | 1973-09-10 | 1975-08-26 | Nat Semiconductor Corp | Integrated circuit device and method utilizing ion implanted and up diffusion for isolated region |
| FR2280974A1 (fr) * | 1974-08-01 | 1976-02-27 | Silec Semi Conducteurs | Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus |
| DE2506436C3 (de) * | 1975-02-15 | 1980-05-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Diffusionsverfahren zum Herstellen aluminiumdotierter Isolationszonen für Halbleiterbauelemente |
| GB1536545A (en) * | 1975-03-26 | 1978-12-20 | Mullard Ltd | Semiconductor device manufacture |
-
1976
- 1976-06-21 US US05/698,480 patent/US4099997A/en not_active Expired - Lifetime
-
1977
- 1977-04-28 IN IN634/CAL/77A patent/IN146805B/en unknown
- 1977-05-19 IT IT23774/77A patent/IT1082080B/it active
- 1977-06-07 SE SE7706615A patent/SE7706615L/ not_active Application Discontinuation
- 1977-06-09 GB GB24125/77A patent/GB1575058A/en not_active Expired
- 1977-06-11 DE DE19772726484 patent/DE2726484A1/de not_active Withdrawn
- 1977-06-14 FR FR7718224A patent/FR2356272A1/fr active Pending
- 1977-06-17 JP JP7117677A patent/JPS52156578A/ja active Granted
- 1977-06-18 PL PL1977198972A patent/PL114729B1/pl unknown
- 1977-06-20 BE BE178599A patent/BE855889A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2726484A1 (de) | 1977-12-29 |
| JPS5641181B2 (fr) | 1981-09-26 |
| FR2356272A1 (fr) | 1978-01-20 |
| GB1575058A (en) | 1980-09-17 |
| IN146805B (fr) | 1979-09-15 |
| SE7706615L (sv) | 1977-12-22 |
| JPS52156578A (en) | 1977-12-27 |
| IT1082080B (it) | 1985-05-21 |
| PL114729B1 (en) | 1981-02-28 |
| US4099997A (en) | 1978-07-11 |
| PL198972A1 (pl) | 1978-01-30 |
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