JPS52156578A - Method of producing semiconductor device - Google Patents

Method of producing semiconductor device

Info

Publication number
JPS52156578A
JPS52156578A JP7117677A JP7117677A JPS52156578A JP S52156578 A JPS52156578 A JP S52156578A JP 7117677 A JP7117677 A JP 7117677A JP 7117677 A JP7117677 A JP 7117677A JP S52156578 A JPS52156578 A JP S52156578A
Authority
JP
Japan
Prior art keywords
semiconductor device
producing semiconductor
producing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7117677A
Other languages
English (en)
Other versions
JPS5641181B2 (ja
Inventor
Rozunofusuki Uoshiefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS52156578A publication Critical patent/JPS52156578A/ja
Publication of JPS5641181B2 publication Critical patent/JPS5641181B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP7117677A 1976-06-21 1977-06-17 Method of producing semiconductor device Granted JPS52156578A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/698,480 US4099997A (en) 1976-06-21 1976-06-21 Method of fabricating a semiconductor device

Publications (2)

Publication Number Publication Date
JPS52156578A true JPS52156578A (en) 1977-12-27
JPS5641181B2 JPS5641181B2 (ja) 1981-09-26

Family

ID=24805431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7117677A Granted JPS52156578A (en) 1976-06-21 1977-06-17 Method of producing semiconductor device

Country Status (10)

Country Link
US (1) US4099997A (ja)
JP (1) JPS52156578A (ja)
BE (1) BE855889A (ja)
DE (1) DE2726484A1 (ja)
FR (1) FR2356272A1 (ja)
GB (1) GB1575058A (ja)
IN (1) IN146805B (ja)
IT (1) IT1082080B (ja)
PL (1) PL114729B1 (ja)
SE (1) SE7706615L (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199386A (en) * 1978-11-28 1980-04-22 Rca Corporation Method of diffusing aluminum into monocrystalline silicon
JPS5824007B2 (ja) * 1979-07-16 1983-05-18 株式会社日立製作所 半導体装置の製造方法
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
DE19908400A1 (de) * 1999-02-26 2000-09-07 Bosch Gmbh Robert Verfahren zur Herstellung hochdotierter Halbleiterbauelemente

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3313012A (en) * 1963-11-13 1967-04-11 Texas Instruments Inc Method for making a pnpn device by diffusing
GB1068392A (en) * 1965-05-05 1967-05-10 Lucas Industries Ltd Semi-conductor devices
US3523042A (en) * 1967-12-26 1970-08-04 Hughes Aircraft Co Method of making bipolar transistor devices
NL140657B (nl) * 1968-06-21 1973-12-17 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting door een diffusiebehandeling en halfgeleiderinrichting, vervaardigd volgens deze werkwijze.
GB1199399A (en) * 1968-06-21 1970-07-22 Matsushita Electronics Corp Improvements in or relating to the Manufacture of Semiconductors.
DE1811277C3 (de) * 1968-11-27 1978-06-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht
US3748198A (en) * 1970-01-22 1973-07-24 Ibm Simultaneous double diffusion into a semiconductor substrate
US3886569A (en) * 1970-01-22 1975-05-27 Ibm Simultaneous double diffusion into a semiconductor substrate
FR2088067A1 (en) * 1970-05-13 1972-01-07 Tsitovsky Ilya Semiconductor slice - with shaped p-n junctions
US3751314A (en) * 1971-07-01 1973-08-07 Bell Telephone Labor Inc Silicon semiconductor device processing
DE2214224C3 (de) * 1972-03-23 1978-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Bildung von pn-Übergängen in III-V-Halbleiter-Einkristallen
US3901735A (en) * 1973-09-10 1975-08-26 Nat Semiconductor Corp Integrated circuit device and method utilizing ion implanted and up diffusion for isolated region
FR2280974A1 (fr) * 1974-08-01 1976-02-27 Silec Semi Conducteurs Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus
DE2506436C3 (de) * 1975-02-15 1980-05-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Diffusionsverfahren zum Herstellen aluminiumdotierter Isolationszonen für Halbleiterbauelemente
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture

Also Published As

Publication number Publication date
DE2726484A1 (de) 1977-12-29
JPS5641181B2 (ja) 1981-09-26
FR2356272A1 (fr) 1978-01-20
GB1575058A (en) 1980-09-17
IN146805B (ja) 1979-09-15
SE7706615L (sv) 1977-12-22
IT1082080B (it) 1985-05-21
PL114729B1 (en) 1981-02-28
US4099997A (en) 1978-07-11
BE855889A (fr) 1977-10-17
PL198972A1 (pl) 1978-01-30

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