JPS56153751A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56153751A JPS56153751A JP5677480A JP5677480A JPS56153751A JP S56153751 A JPS56153751 A JP S56153751A JP 5677480 A JP5677480 A JP 5677480A JP 5677480 A JP5677480 A JP 5677480A JP S56153751 A JPS56153751 A JP S56153751A
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitride film
- wiring layer
- sio2
- thereafter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 4
- 150000004767 nitrides Chemical class 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 210000003323 beak Anatomy 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5677480A JPS56153751A (en) | 1980-04-28 | 1980-04-28 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5677480A JPS56153751A (en) | 1980-04-28 | 1980-04-28 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56153751A true JPS56153751A (en) | 1981-11-27 |
JPS6150385B2 JPS6150385B2 (enrdf_load_stackoverflow) | 1986-11-04 |
Family
ID=13036801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5677480A Granted JPS56153751A (en) | 1980-04-28 | 1980-04-28 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56153751A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0191439A (ja) * | 1987-06-18 | 1989-04-11 | Seiko Instr & Electron Ltd | 半導体装置 |
US5780364A (en) * | 1994-12-12 | 1998-07-14 | Micron Technology, Inc. | Method to cure mobile ion contamination in semiconductor processing |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5268388A (en) * | 1975-12-05 | 1977-06-07 | Nec Corp | Semiconductor integrated circuit |
JPS52113161A (en) * | 1976-03-19 | 1977-09-22 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-04-28 JP JP5677480A patent/JPS56153751A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5268388A (en) * | 1975-12-05 | 1977-06-07 | Nec Corp | Semiconductor integrated circuit |
JPS52113161A (en) * | 1976-03-19 | 1977-09-22 | Hitachi Ltd | Semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0191439A (ja) * | 1987-06-18 | 1989-04-11 | Seiko Instr & Electron Ltd | 半導体装置 |
US5780364A (en) * | 1994-12-12 | 1998-07-14 | Micron Technology, Inc. | Method to cure mobile ion contamination in semiconductor processing |
US5943602A (en) * | 1994-12-12 | 1999-08-24 | Micron Technology, Inc. | Method to cure mobile ion contamination in semiconductor processing |
US6114222A (en) * | 1994-12-12 | 2000-09-05 | Micron Technology, Inc. | Method to cure mobile ion contamination in semiconductor processing |
Also Published As
Publication number | Publication date |
---|---|
JPS6150385B2 (enrdf_load_stackoverflow) | 1986-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5736844A (en) | Semiconductor device | |
EP0081226A3 (en) | Method of making semiconductor device | |
JPS56153751A (en) | Semiconductor device | |
ATE19712T1 (de) | Verfahren zum herstellen einer isolierschicht zwischen metallisierungsebenen von integrierten halbleiterschaltungen. | |
JPS5731155A (en) | Manufacture of semiconductor device | |
JPS5553441A (en) | Semiconductor device | |
JPS6425551A (en) | Semiconductor device | |
JPS6484722A (en) | Manufacture of semiconductor device | |
GB1363815A (en) | Semiconductor device and method of producing same | |
JPS55113344A (en) | Electrode wiring and its manufacture | |
JPS5461490A (en) | Multi-layer wiring forming method in semiconductor device | |
JPS56153750A (en) | Semiconductor device | |
JPS6482548A (en) | Formation of interconnection pattern | |
JPS5788735A (en) | Preparation of semiconductor device | |
JPS5787155A (en) | Manufacture of semiconductor device | |
JPS577153A (en) | Preparation of semiconductor device | |
JPS5789239A (en) | Semiconductor integrated circuit | |
JPS56125856A (en) | Manufacture of semiconductor device | |
JPS6489343A (en) | Manufacture of semiconductor device | |
JPS57206049A (en) | Manufacture of semiconductor device | |
JPS57160154A (en) | Manufacture of semiconductor device | |
JPS5760854A (en) | Wiring of semiconductor device | |
JPS6435933A (en) | Manufacture of multilayer interconnection semiconductor device | |
JPS6450568A (en) | Semiconductor device | |
JPS5797643A (en) | Manufacture of semiconductor device |