JPS56150888A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS56150888A
JPS56150888A JP5451680A JP5451680A JPS56150888A JP S56150888 A JPS56150888 A JP S56150888A JP 5451680 A JP5451680 A JP 5451680A JP 5451680 A JP5451680 A JP 5451680A JP S56150888 A JPS56150888 A JP S56150888A
Authority
JP
Japan
Prior art keywords
substrate
electrode
induction
junction
clad layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5451680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6211796B2 (enrdf_load_stackoverflow
Inventor
Masafumi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5451680A priority Critical patent/JPS56150888A/ja
Publication of JPS56150888A publication Critical patent/JPS56150888A/ja
Publication of JPS6211796B2 publication Critical patent/JPS6211796B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP5451680A 1980-04-23 1980-04-23 Semiconductor laser device Granted JPS56150888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5451680A JPS56150888A (en) 1980-04-23 1980-04-23 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5451680A JPS56150888A (en) 1980-04-23 1980-04-23 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS56150888A true JPS56150888A (en) 1981-11-21
JPS6211796B2 JPS6211796B2 (enrdf_load_stackoverflow) 1987-03-14

Family

ID=12972806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5451680A Granted JPS56150888A (en) 1980-04-23 1980-04-23 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS56150888A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789289A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor device
JPS594192A (ja) * 1982-06-30 1984-01-10 Sharp Corp 半導体レ−ザ装置
JPS60198885A (ja) * 1984-03-23 1985-10-08 Toshiba Corp 集積化半導体レ−ザ装置
JPS6218079A (ja) * 1985-07-17 1987-01-27 Matsushita Electric Ind Co Ltd 光集積回路装置
US5252513A (en) * 1990-03-28 1993-10-12 Xerox Corporation Method for forming a laser and light detector on a semiconductor substrate
CN107132866A (zh) * 2016-02-26 2017-09-05 捷温有限责任公司 调温设备和检查传感器装置功能性的方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789289A (en) * 1980-11-25 1982-06-03 Sharp Corp Semiconductor device
JPS594192A (ja) * 1982-06-30 1984-01-10 Sharp Corp 半導体レ−ザ装置
JPS60198885A (ja) * 1984-03-23 1985-10-08 Toshiba Corp 集積化半導体レ−ザ装置
JPS6218079A (ja) * 1985-07-17 1987-01-27 Matsushita Electric Ind Co Ltd 光集積回路装置
US5252513A (en) * 1990-03-28 1993-10-12 Xerox Corporation Method for forming a laser and light detector on a semiconductor substrate
CN107132866A (zh) * 2016-02-26 2017-09-05 捷温有限责任公司 调温设备和检查传感器装置功能性的方法
CN107132866B (zh) * 2016-02-26 2019-04-05 捷温有限责任公司 调温设备和检查传感器装置功能性的方法
US10605497B2 (en) 2016-02-26 2020-03-31 Gentherm Gmbh Device for regulating the temperature of at least one object and method for checking the functional capability of a sensor device having at least two sensors

Also Published As

Publication number Publication date
JPS6211796B2 (enrdf_load_stackoverflow) 1987-03-14

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