JPS56146231A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56146231A
JPS56146231A JP4164480A JP4164480A JPS56146231A JP S56146231 A JPS56146231 A JP S56146231A JP 4164480 A JP4164480 A JP 4164480A JP 4164480 A JP4164480 A JP 4164480A JP S56146231 A JPS56146231 A JP S56146231A
Authority
JP
Japan
Prior art keywords
type
layer
type impurity
melting point
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4164480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6137773B2 (enrdf_load_stackoverflow
Inventor
Kazuyoshi Shinada
Shinji Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4164480A priority Critical patent/JPS56146231A/ja
Publication of JPS56146231A publication Critical patent/JPS56146231A/ja
Publication of JPS6137773B2 publication Critical patent/JPS6137773B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP4164480A 1980-03-31 1980-03-31 Manufacture of semiconductor device Granted JPS56146231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4164480A JPS56146231A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4164480A JPS56146231A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56146231A true JPS56146231A (en) 1981-11-13
JPS6137773B2 JPS6137773B2 (enrdf_load_stackoverflow) 1986-08-26

Family

ID=12614039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4164480A Granted JPS56146231A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56146231A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
JP2003059856A (ja) * 2001-08-09 2003-02-28 Fuji Electric Co Ltd 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
US6617612B2 (en) * 1993-11-05 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a semiconductor integrated circuit
JP2003059856A (ja) * 2001-08-09 2003-02-28 Fuji Electric Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6137773B2 (enrdf_load_stackoverflow) 1986-08-26

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