JPS56144554A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56144554A
JPS56144554A JP4720880A JP4720880A JPS56144554A JP S56144554 A JPS56144554 A JP S56144554A JP 4720880 A JP4720880 A JP 4720880A JP 4720880 A JP4720880 A JP 4720880A JP S56144554 A JPS56144554 A JP S56144554A
Authority
JP
Japan
Prior art keywords
layer
hillocks
constitution
insulating film
interlayer insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4720880A
Other languages
Japanese (ja)
Inventor
Takeo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP4720880A priority Critical patent/JPS56144554A/en
Publication of JPS56144554A publication Critical patent/JPS56144554A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent short-circuiting between electrodes by a method wherein after an Al surface layer which might produce hillocks has been slightly etched to completely remove the portions which become nuclei, then the second layer electrode is provided through an interlayer insulating film. CONSTITUTION:After the first layer Al 4 has been formed, the surface thereof is etched by approximately 1/3. Then, the Al is photoetched to form a wiring pattern, which is coated with an interlayer insulating film 5 and selectively opened to form the second layer Al 6. By said constitution, defective portions which might become the nuclei of hillocks are removed by the etching of the first layer Al, and the production of hillocks can be completely prevented also in the subsequent heat treatment. Accordingly, no short-circuiting occurs between the layers. A completely similar effect can be obtained if the first layer is an Al alloy such as Al-Si.
JP4720880A 1980-04-10 1980-04-10 Semiconductor device Pending JPS56144554A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4720880A JPS56144554A (en) 1980-04-10 1980-04-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4720880A JPS56144554A (en) 1980-04-10 1980-04-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56144554A true JPS56144554A (en) 1981-11-10

Family

ID=12768728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4720880A Pending JPS56144554A (en) 1980-04-10 1980-04-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56144554A (en)

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