JPS56144544A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56144544A JPS56144544A JP4808480A JP4808480A JPS56144544A JP S56144544 A JPS56144544 A JP S56144544A JP 4808480 A JP4808480 A JP 4808480A JP 4808480 A JP4808480 A JP 4808480A JP S56144544 A JPS56144544 A JP S56144544A
- Authority
- JP
- Japan
- Prior art keywords
- oxidation
- production
- resist mask
- reactive sputtering
- defects caused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W10/0125—
-
- H10W10/13—
Landscapes
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4808480A JPS56144544A (en) | 1980-04-14 | 1980-04-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4808480A JPS56144544A (en) | 1980-04-14 | 1980-04-14 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56144544A true JPS56144544A (en) | 1981-11-10 |
| JPS6257103B2 JPS6257103B2 (enExample) | 1987-11-30 |
Family
ID=12793451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4808480A Granted JPS56144544A (en) | 1980-04-14 | 1980-04-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56144544A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5768033A (en) * | 1980-10-16 | 1982-04-26 | Toshiba Corp | Manufacture of semiconductor device |
| JPH01290244A (ja) * | 1988-05-18 | 1989-11-22 | Sony Corp | 半導体装置の製造方法 |
-
1980
- 1980-04-14 JP JP4808480A patent/JPS56144544A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5768033A (en) * | 1980-10-16 | 1982-04-26 | Toshiba Corp | Manufacture of semiconductor device |
| JPH01290244A (ja) * | 1988-05-18 | 1989-11-22 | Sony Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6257103B2 (enExample) | 1987-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6384789A (ja) | 光加工方法 | |
| JPH01187814A (ja) | 薄膜半導体装置の製造方法 | |
| JPS5679449A (en) | Production of semiconductor device | |
| JPS56144577A (en) | Production of semiconductor device | |
| JPS5567132A (en) | Method for manufacturing semiconductor device | |
| JPS56144544A (en) | Manufacture of semiconductor device | |
| JPS5688317A (en) | Manufacture of semiconductor device | |
| JPS566444A (en) | Production of semiconductor device | |
| JPS5633821A (en) | Photoannealing method for semiconductor layer | |
| JPS5737830A (en) | Manufacture of semiconductor device | |
| JPH0783006B2 (ja) | 薄膜加工方法 | |
| JPS5710267A (en) | Semiconductor device | |
| JPS5596681A (en) | Method of fabricating semiconductor device | |
| JPS5673450A (en) | Manufacture of semiconductor device | |
| JPS60206130A (ja) | 半導体基板のマ−キング方法 | |
| JPS5730337A (en) | Formation of surface protecting film for semiconductor | |
| JPS57133626A (en) | Manufacture of semiconductor thin film | |
| JPS5789476A (en) | Dry etching method | |
| JPS5710930A (en) | Dry development method | |
| JPS5721933A (en) | Recrystallization of semiconductor element | |
| JPS57112013A (en) | Manufacture of semiconductor device | |
| JPS5693312A (en) | Manufacture of semiconductor device | |
| GB2133618A (en) | Fabricating semiconductor circuits | |
| JPS5671937A (en) | Manufacture of semiconductor device | |
| JPS57106046A (en) | Manufacture of semiconductor device |