JPS56142650A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS56142650A
JPS56142650A JP4646380A JP4646380A JPS56142650A JP S56142650 A JPS56142650 A JP S56142650A JP 4646380 A JP4646380 A JP 4646380A JP 4646380 A JP4646380 A JP 4646380A JP S56142650 A JPS56142650 A JP S56142650A
Authority
JP
Japan
Prior art keywords
layer
type
base
type impurity
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4646380A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0133952B2 (https=
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4646380A priority Critical patent/JPS56142650A/ja
Publication of JPS56142650A publication Critical patent/JPS56142650A/ja
Publication of JPH0133952B2 publication Critical patent/JPH0133952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0128—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising multiple local oxidation process steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP4646380A 1980-04-09 1980-04-09 Semiconductor device and manufacture thereof Granted JPS56142650A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4646380A JPS56142650A (en) 1980-04-09 1980-04-09 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4646380A JPS56142650A (en) 1980-04-09 1980-04-09 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS56142650A true JPS56142650A (en) 1981-11-07
JPH0133952B2 JPH0133952B2 (https=) 1989-07-17

Family

ID=12747853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4646380A Granted JPS56142650A (en) 1980-04-09 1980-04-09 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56142650A (https=)

Also Published As

Publication number Publication date
JPH0133952B2 (https=) 1989-07-17

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