JPH0133952B2 - - Google Patents
Info
- Publication number
- JPH0133952B2 JPH0133952B2 JP55046463A JP4646380A JPH0133952B2 JP H0133952 B2 JPH0133952 B2 JP H0133952B2 JP 55046463 A JP55046463 A JP 55046463A JP 4646380 A JP4646380 A JP 4646380A JP H0133952 B2 JPH0133952 B2 JP H0133952B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- semiconductor
- crystal layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
- H10W10/0128—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising multiple local oxidation process steps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
Landscapes
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4646380A JPS56142650A (en) | 1980-04-09 | 1980-04-09 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4646380A JPS56142650A (en) | 1980-04-09 | 1980-04-09 | Semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56142650A JPS56142650A (en) | 1981-11-07 |
| JPH0133952B2 true JPH0133952B2 (https=) | 1989-07-17 |
Family
ID=12747853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4646380A Granted JPS56142650A (en) | 1980-04-09 | 1980-04-09 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56142650A (https=) |
-
1980
- 1980-04-09 JP JP4646380A patent/JPS56142650A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56142650A (en) | 1981-11-07 |
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