JPS56138951A - Manufacture of semiconductor memory device - Google Patents

Manufacture of semiconductor memory device

Info

Publication number
JPS56138951A
JPS56138951A JP4175080A JP4175080A JPS56138951A JP S56138951 A JPS56138951 A JP S56138951A JP 4175080 A JP4175080 A JP 4175080A JP 4175080 A JP4175080 A JP 4175080A JP S56138951 A JPS56138951 A JP S56138951A
Authority
JP
Japan
Prior art keywords
oxide film
boron ions
polysilicon
layer
polysilicon electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4175080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6317229B2 (enrdf_load_stackoverflow
Inventor
Akira Takei
Takashi Mitsuida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4175080A priority Critical patent/JPS56138951A/ja
Publication of JPS56138951A publication Critical patent/JPS56138951A/ja
Publication of JPS6317229B2 publication Critical patent/JPS6317229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP4175080A 1980-03-31 1980-03-31 Manufacture of semiconductor memory device Granted JPS56138951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4175080A JPS56138951A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4175080A JPS56138951A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS56138951A true JPS56138951A (en) 1981-10-29
JPS6317229B2 JPS6317229B2 (enrdf_load_stackoverflow) 1988-04-13

Family

ID=12617090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4175080A Granted JPS56138951A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56138951A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378961A (ja) * 1986-09-22 1988-04-09 日本ゼオン株式会社 制振複合床材
JPS6378960A (ja) * 1986-09-22 1988-04-09 日本ゼオン株式会社 防音床材
JPH0272733U (enrdf_load_stackoverflow) * 1988-11-25 1990-06-04
JPH02105438U (enrdf_load_stackoverflow) * 1989-02-10 1990-08-22

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275190A (en) * 1975-12-18 1977-06-23 Toshiba Corp Production of 4-phase drive charge coupling device
JPS5349961A (en) * 1976-10-15 1978-05-06 Fairchild Camera Instr Co Semiconductor element structure and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275190A (en) * 1975-12-18 1977-06-23 Toshiba Corp Production of 4-phase drive charge coupling device
JPS5349961A (en) * 1976-10-15 1978-05-06 Fairchild Camera Instr Co Semiconductor element structure and method of producing same

Also Published As

Publication number Publication date
JPS6317229B2 (enrdf_load_stackoverflow) 1988-04-13

Similar Documents

Publication Publication Date Title
JPS5599744A (en) Manufacture of semiconductor device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS56138951A (en) Manufacture of semiconductor memory device
JPS5736842A (en) Semiconductor integrated circuit device
JPS56124270A (en) Manufacture of semiconductor device
JPS57155777A (en) Mos transistor
JPS56155531A (en) Manufacture of semiconductor device
JPS57120371A (en) Manufacture of complementary type mos semiconductor
JPS5556663A (en) Insulating-gate type field-effect transistor
JPS55107229A (en) Method of manufacturing semiconductor device
JPS54114984A (en) Semiconductor device
JPS5773974A (en) Manufacture of most type semiconductor device
JPS6489457A (en) Manufacture of semiconductor device
JPS5483778A (en) Mos semiconductor device and its manufacture
JPS5591873A (en) Manufacture of semiconductor device
JPS52123878A (en) Mos type semiconductor device and its production process
JPS5513953A (en) Complementary integrated circuit
JPS57100768A (en) Manufacture of field effect semiconductor device
JPS56130970A (en) Manufacture of semiconductor device
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS54129982A (en) Semiconductor device
JPS6465875A (en) Thin film transistor and manufacture thereof
JPS5372473A (en) Manufacture of mis type semicondctor device
JPS5472668A (en) Manufacture for semiconductor device
JPS54129983A (en) Manufacture of semiconductor device