JPS56135994A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS56135994A
JPS56135994A JP3987480A JP3987480A JPS56135994A JP S56135994 A JPS56135994 A JP S56135994A JP 3987480 A JP3987480 A JP 3987480A JP 3987480 A JP3987480 A JP 3987480A JP S56135994 A JPS56135994 A JP S56135994A
Authority
JP
Japan
Prior art keywords
layer
electrode
light absorbing
electrode side
clad layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3987480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6239839B2 (enrdf_load_stackoverflow
Inventor
Toshihiro Kusuki
Akio Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3987480A priority Critical patent/JPS56135994A/ja
Publication of JPS56135994A publication Critical patent/JPS56135994A/ja
Publication of JPS6239839B2 publication Critical patent/JPS6239839B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP3987480A 1980-03-28 1980-03-28 Semiconductor light emitting device Granted JPS56135994A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3987480A JPS56135994A (en) 1980-03-28 1980-03-28 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3987480A JPS56135994A (en) 1980-03-28 1980-03-28 Semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS56135994A true JPS56135994A (en) 1981-10-23
JPS6239839B2 JPS6239839B2 (enrdf_load_stackoverflow) 1987-08-25

Family

ID=12565122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3987480A Granted JPS56135994A (en) 1980-03-28 1980-03-28 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS56135994A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603181A (ja) * 1983-06-21 1985-01-09 Toshiba Corp 半導体レ−ザ装置
JPS60226191A (ja) * 1984-04-25 1985-11-11 Sharp Corp 半導体レ−ザ素子
JPS6174384A (ja) * 1984-09-19 1986-04-16 Sony Corp 半導体レ−ザ−
JPS6450481A (en) * 1987-07-27 1989-02-27 Ortel Corp Super light emitting diode and single mode laser
US4987096A (en) * 1988-12-14 1991-01-22 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
US5003358A (en) * 1987-08-05 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device disposed in an insulating substrate
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
US5194399A (en) * 1987-08-05 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
JPH0697496A (ja) * 1992-09-14 1994-04-08 Rohm Co Ltd スーパールミネッセントダイオード

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603181A (ja) * 1983-06-21 1985-01-09 Toshiba Corp 半導体レ−ザ装置
JPS60226191A (ja) * 1984-04-25 1985-11-11 Sharp Corp 半導体レ−ザ素子
JPS6174384A (ja) * 1984-09-19 1986-04-16 Sony Corp 半導体レ−ザ−
JPS6450481A (en) * 1987-07-27 1989-02-27 Ortel Corp Super light emitting diode and single mode laser
US5003358A (en) * 1987-08-05 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device disposed in an insulating substrate
US5100833A (en) * 1987-08-05 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5194399A (en) * 1987-08-05 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US4987096A (en) * 1988-12-14 1991-01-22 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
JPH0697496A (ja) * 1992-09-14 1994-04-08 Rohm Co Ltd スーパールミネッセントダイオード

Also Published As

Publication number Publication date
JPS6239839B2 (enrdf_load_stackoverflow) 1987-08-25

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