JPS56133870A - Mos field effect semiconductor device with high breakdown voltage - Google Patents
Mos field effect semiconductor device with high breakdown voltageInfo
- Publication number
- JPS56133870A JPS56133870A JP3770280A JP3770280A JPS56133870A JP S56133870 A JPS56133870 A JP S56133870A JP 3770280 A JP3770280 A JP 3770280A JP 3770280 A JP3770280 A JP 3770280A JP S56133870 A JPS56133870 A JP S56133870A
- Authority
- JP
- Japan
- Prior art keywords
- resistance layer
- pinch
- semiconductor device
- field effect
- breakdown voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000015556 catabolic process Effects 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3770280A JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
| US07/277,440 US4947232A (en) | 1980-03-22 | 1988-11-28 | High voltage MOS transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3770280A JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56133870A true JPS56133870A (en) | 1981-10-20 |
| JPS622705B2 JPS622705B2 (enrdf_load_stackoverflow) | 1987-01-21 |
Family
ID=12504852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3770280A Granted JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56133870A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59154056A (ja) * | 1983-02-23 | 1984-09-03 | Toshiba Corp | 半導体装置 |
| EP0620599A1 (en) * | 1993-03-31 | 1994-10-19 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
| JPH0788141A (ja) * | 1993-06-30 | 1995-04-04 | San Beam:Kk | 回転椅子 |
-
1980
- 1980-03-22 JP JP3770280A patent/JPS56133870A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59154056A (ja) * | 1983-02-23 | 1984-09-03 | Toshiba Corp | 半導体装置 |
| EP0620599A1 (en) * | 1993-03-31 | 1994-10-19 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
| JPH0788141A (ja) * | 1993-06-30 | 1995-04-04 | San Beam:Kk | 回転椅子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS622705B2 (enrdf_load_stackoverflow) | 1987-01-21 |
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