JPS622705B2 - - Google Patents
Info
- Publication number
- JPS622705B2 JPS622705B2 JP55037702A JP3770280A JPS622705B2 JP S622705 B2 JPS622705 B2 JP S622705B2 JP 55037702 A JP55037702 A JP 55037702A JP 3770280 A JP3770280 A JP 3770280A JP S622705 B2 JPS622705 B2 JP S622705B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- resistance layer
- drain
- source
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3770280A JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
US07/277,440 US4947232A (en) | 1980-03-22 | 1988-11-28 | High voltage MOS transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3770280A JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56133870A JPS56133870A (en) | 1981-10-20 |
JPS622705B2 true JPS622705B2 (enrdf_load_stackoverflow) | 1987-01-21 |
Family
ID=12504852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3770280A Granted JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56133870A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0618251B2 (ja) * | 1983-02-23 | 1994-03-09 | 株式会社東芝 | 半導体装置 |
US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
JPH0788141A (ja) * | 1993-06-30 | 1995-04-04 | San Beam:Kk | 回転椅子 |
-
1980
- 1980-03-22 JP JP3770280A patent/JPS56133870A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS56133870A (en) | 1981-10-20 |
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